GaN Growth on Si Using ZnO Buffer Layer

K. C. Kim; S. W. Kang; O. Kryliouk; T. J. Anderson; D. Craciun; V. Craciun; R. K. Singh

doi:10.1557/proc-764-c7.7

GaN Growth on Si Using ZnO Buffer Layer

K. C. Kim, S. W. Kang, O. Kryliouk, T. J. Anderson, D. Craciun, V. Craciun, R. K. Singh

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

ZnO films were deposited by Pulsed Laser Deposition (PLD) onto silicon substrates to serve as a buffer layer for GaN films grown by MOCVD. A ZnO buffer layer was found to improve the quality of GaN grown on Si. The thermal stability of ZnO as a buffer layer was also examined. It was determined that exposure of ZnO/Si to NH₃ at high temperature (> 600 °C) results in the decomposition of ZnO and subsequent poor nucleation of GaN. The ZnO layer thickness on GaN quality was found to be important.

Original language	English
Pages (from-to)	407-411
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	764
DOIs	https://doi.org/10.1557/proc-764-c7.7
State	Published - 2003
Externally published	Yes
Event	MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS: New Applications for Wide-Bandgap Semiconductors - San Francisco, CA, United States Duration: 22 Apr 2003 → 24 Apr 2003

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title = "GaN Growth on Si Using ZnO Buffer Layer",

abstract = "ZnO films were deposited by Pulsed Laser Deposition (PLD) onto silicon substrates to serve as a buffer layer for GaN films grown by MOCVD. A ZnO buffer layer was found to improve the quality of GaN grown on Si. The thermal stability of ZnO as a buffer layer was also examined. It was determined that exposure of ZnO/Si to NH3 at high temperature (> 600 °C) results in the decomposition of ZnO and subsequent poor nucleation of GaN. The ZnO layer thickness on GaN quality was found to be important.",

author = "Kim, {K. C.} and Kang, {S. W.} and O. Kryliouk and Anderson, {T. J.} and D. Craciun and V. Craciun and Singh, {R. K.}",

year = "2003",

doi = "10.1557/proc-764-c7.7",

language = "אנגלית",

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publisher = "Materials Research Society",

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TY - JOUR

T1 - GaN Growth on Si Using ZnO Buffer Layer

AU - Kim, K. C.

AU - Kang, S. W.

AU - Kryliouk, O.

AU - Anderson, T. J.

AU - Craciun, D.

AU - Craciun, V.

AU - Singh, R. K.

PY - 2003

Y1 - 2003

N2 - ZnO films were deposited by Pulsed Laser Deposition (PLD) onto silicon substrates to serve as a buffer layer for GaN films grown by MOCVD. A ZnO buffer layer was found to improve the quality of GaN grown on Si. The thermal stability of ZnO as a buffer layer was also examined. It was determined that exposure of ZnO/Si to NH3 at high temperature (> 600 °C) results in the decomposition of ZnO and subsequent poor nucleation of GaN. The ZnO layer thickness on GaN quality was found to be important.

AB - ZnO films were deposited by Pulsed Laser Deposition (PLD) onto silicon substrates to serve as a buffer layer for GaN films grown by MOCVD. A ZnO buffer layer was found to improve the quality of GaN grown on Si. The thermal stability of ZnO as a buffer layer was also examined. It was determined that exposure of ZnO/Si to NH3 at high temperature (> 600 °C) results in the decomposition of ZnO and subsequent poor nucleation of GaN. The ZnO layer thickness on GaN quality was found to be important.

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SP - 407

EP - 411

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS: New Applications for Wide-Bandgap Semiconductors

Y2 - 22 April 2003 through 24 April 2003

ER -

GaN Growth on Si Using ZnO Buffer Layer

Abstract

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