GaN Growth on Si Using ZnO Buffer Layer

K. C. Kim, S. W. Kang, O. Kryliouk, T. J. Anderson, D. Craciun, V. Craciun, R. K. Singh

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations


ZnO films were deposited by Pulsed Laser Deposition (PLD) onto silicon substrates to serve as a buffer layer for GaN films grown by MOCVD. A ZnO buffer layer was found to improve the quality of GaN grown on Si. The thermal stability of ZnO as a buffer layer was also examined. It was determined that exposure of ZnO/Si to NH3 at high temperature (> 600 °C) results in the decomposition of ZnO and subsequent poor nucleation of GaN. The ZnO layer thickness on GaN quality was found to be important.

Original languageEnglish
Pages (from-to)407-411
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2003
Externally publishedYes
EventMATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS: New Applications for Wide-Bandgap Semiconductors - San Francisco, CA, United States
Duration: 22 Apr 200324 Apr 2003


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