Abstract
We present in this manuscript the results of a comparison study between MOCVD-grown GaN films annealed in a novel high-pressure annealing furnace and those annealed in a conventional tube furnace under flowing argon gas at similar temperatures for similar times. Atomic force microscopy, scanning electron microscopy, X-ray diffraction, photoluminescence and cathodoluminescence were used to investigate the affects of the high-pressure anneals in comparison to those which were annealed with the more conventional method. We demonstrate that high pressure annealing has successfully prevented the degradation of GaN films at high temperatures.
| Original language | English |
|---|---|
| Pages (from-to) | 1081-1087 |
| Number of pages | 7 |
| Journal | Solid-State Electronics |
| Volume | 47 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jun 2003 |
| Externally published | Yes |
Funding
We would like to thank Mr. Eric Lambers of the Major Analytical Instrumentation Center (M.A.I.C.) at the University of Florida performing Auger spectroscopy of the samples, and Dr. Valentin Craciun for all of his help with the Phillips X’Pert system. We would also like to thank Dr. Reza Abbaschian of the University of Florida as well as Dr. Alexander Novikov and Dr. Nikolay Patrin of the Gemesis Corporation for their expertise with the high pressure system. The work at UF is partially supported by NSF DMR 01001438.
| Funders | Funder number |
|---|---|
| NSF DMR | 01001438 |
| University of Florida |