GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment

D. A. Allwood; P. C. Klipstein; N. J. Mason; R. J. Nicholas; P. J. Walker

doi:10.1007/s11664-000-0103-7

GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment

D. A. Allwood
, P. C. Klipstein
, N. J. Mason
, R. J. Nicholas
, P. J. Walker

University of Oxford

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The real and imaginary components of the GaAs refractive index at temperatures between 20-700 °C have been obtained. Measurements were made by comparing the variable angle reflectivity of p-polarized and s-polarized 633 nm wavelength light from a deoxidized GaAs surface. By using these temperature-dependent optical constants for GaAs, modeling has allowed the behavior of surface photoabsorption (SPA) signals with temperature and oxide layers present to be predicted for different angles of incidence. The experimentally observed SPA signals during deoxidization of GaAs show strong qualitative agreement with these calculations at each of the angles of incidence considered. The measurement of data and application to modeling provides a platform for the measurement of temperature-dependent optical data for other III-V materials and for the investigation of deoxidation mechanisms.

Original language	English
Pages (from-to)	99-105
Number of pages	7
Journal	Journal of Electronic Materials
Volume	29
Issue number	1
DOIs	https://doi.org/10.1007/s11664-000-0103-7
State	Published - Jan 2000
Externally published	Yes

Bibliographical note

Funding Information:
The authors would like to thank Wafer Technology Ltd. (Milton Keynes, U.K.) both for financial support and provision of substrate materials. Furthermore, the Teaching Company Directorate (scheme number 2221) and EPSRC (grant GR/K76962) are thanked for financial support. The technical assistance of K.R. Belcher and S.J. Moulder is also gratefully acknowledged.

Funding

The authors would like to thank Wafer Technology Ltd. (Milton Keynes, U.K.) both for financial support and provision of substrate materials. Furthermore, the Teaching Company Directorate (scheme number 2221) and EPSRC (grant GR/K76962) are thanked for financial support. The technical assistance of K.R. Belcher and S.J. Moulder is also gratefully acknowledged.

Funders	Funder number
Wafer Technology Ltd.	2221
Engineering and Physical Sciences Research Council	GR/K76962

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@article{11066b814cc045439424acf81639d897,

title = "GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment",

abstract = "The real and imaginary components of the GaAs refractive index at temperatures between 20-700 °C have been obtained. Measurements were made by comparing the variable angle reflectivity of p-polarized and s-polarized 633 nm wavelength light from a deoxidized GaAs surface. By using these temperature-dependent optical constants for GaAs, modeling has allowed the behavior of surface photoabsorption (SPA) signals with temperature and oxide layers present to be predicted for different angles of incidence. The experimentally observed SPA signals during deoxidization of GaAs show strong qualitative agreement with these calculations at each of the angles of incidence considered. The measurement of data and application to modeling provides a platform for the measurement of temperature-dependent optical data for other III-V materials and for the investigation of deoxidation mechanisms.",

author = "Allwood, \{D. A.\} and Klipstein, \{P. C.\} and Mason, \{N. J.\} and Nicholas, \{R. J.\} and Walker, \{P. J.\}",

note = "Funding Information: The authors would like to thank Wafer Technology Ltd. (Milton Keynes, U.K.) both for financial support and provision of substrate materials. Furthermore, the Teaching Company Directorate (scheme number 2221) and EPSRC (grant GR/K76962) are thanked for financial support. The technical assistance of K.R. Belcher and S.J. Moulder is also gratefully acknowledged.",

year = "2000",

month = jan,

doi = "10.1007/s11664-000-0103-7",

language = "אנגלית",

volume = "29",

pages = "99--105",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "1",

}

TY - JOUR

T1 - GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment

AU - Allwood, D. A.

AU - Klipstein, P. C.

AU - Mason, N. J.

AU - Nicholas, R. J.

AU - Walker, P. J.

N1 - Funding Information: The authors would like to thank Wafer Technology Ltd. (Milton Keynes, U.K.) both for financial support and provision of substrate materials. Furthermore, the Teaching Company Directorate (scheme number 2221) and EPSRC (grant GR/K76962) are thanked for financial support. The technical assistance of K.R. Belcher and S.J. Moulder is also gratefully acknowledged.

PY - 2000/1

Y1 - 2000/1

N2 - The real and imaginary components of the GaAs refractive index at temperatures between 20-700 °C have been obtained. Measurements were made by comparing the variable angle reflectivity of p-polarized and s-polarized 633 nm wavelength light from a deoxidized GaAs surface. By using these temperature-dependent optical constants for GaAs, modeling has allowed the behavior of surface photoabsorption (SPA) signals with temperature and oxide layers present to be predicted for different angles of incidence. The experimentally observed SPA signals during deoxidization of GaAs show strong qualitative agreement with these calculations at each of the angles of incidence considered. The measurement of data and application to modeling provides a platform for the measurement of temperature-dependent optical data for other III-V materials and for the investigation of deoxidation mechanisms.

AB - The real and imaginary components of the GaAs refractive index at temperatures between 20-700 °C have been obtained. Measurements were made by comparing the variable angle reflectivity of p-polarized and s-polarized 633 nm wavelength light from a deoxidized GaAs surface. By using these temperature-dependent optical constants for GaAs, modeling has allowed the behavior of surface photoabsorption (SPA) signals with temperature and oxide layers present to be predicted for different angles of incidence. The experimentally observed SPA signals during deoxidization of GaAs show strong qualitative agreement with these calculations at each of the angles of incidence considered. The measurement of data and application to modeling provides a platform for the measurement of temperature-dependent optical data for other III-V materials and for the investigation of deoxidation mechanisms.

UR - https://www.scopus.com/pages/publications/0033881569

U2 - 10.1007/s11664-000-0103-7

DO - 10.1007/s11664-000-0103-7

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0033881569

SN - 0361-5235

VL - 29

SP - 99

EP - 105

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 1

ER -

GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment

Abstract

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