Abstract
The chemical mechanical polishing of copper in several slurry chemistries based on iodate and iodine oxidizers has been investigated. Benzotriazole (BTA) and potassium iodide (KI) were used for preparing the polishing slurry chemistries based iodate. As observed by the anodic electrochemical behavior of copper and the surface analyses of EDS, it was determined that CuI layer formed in the iodate and iodine based solutions. Especially, in I2 slurry in pH 4, CuI layer formed very fast and uniformly, and passivated the copper. In addition, the highest removal rate using this slurry was obtained. These results were compared to H2O2 based slurries. From these experimental results, the slurry containing 0.1M KIO3 and 0.01M KI, and 0.01N I2 give better results than H2O2 based slurry in copper CMP.
| Original language | English |
|---|---|
| Pages (from-to) | E7.8.1-E7.8.6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 613 |
| DOIs | |
| State | Published - 2000 |
| Externally published | Yes |
| Event | Chemical-Mechanical Polishing 2000-Fundamentals and Materials Issues - San Francisco, CA, United States Duration: 26 Apr 2000 → 27 Apr 2000 |
Funding
The authors would like to acknowledge the financial support of the Engineering Research Center (ERC) for Particle Science and Technology at the University of Florida, the National Science Foundation (NSF) grant #EEC-94-02989, and the Industrial Partners of the ERC Fig. 3 Copper Surface Morphology by SEM: (a) 0.1M KIO3 and 0.01M KI in pH 6.5, 10 min dipping, (b) 0.1M KIO3 and 0.01M KI in pH 6.5, 5 sec dipping in dynamic OCP, (c) 0.01N I2 in pH 4, 5 sec dipping, (d) 0.01N I2 in pH 6, 5 sec dipping, (e) after potentiodynamic measurement in 10% H2O2 in pH 4, (f) after potentiodynamic measurement in 10% H2O2 in pH 6
| Funders | Funder number |
|---|---|
| ERC Fig. 3 Copper Surface Morphology | 0.01M KI |
| National Science Foundation | #EEC-94-02989 |
| University of Florida | |
| Engineering Research Centers |