Four-wave mixing and nonlinear parameter measurement in a gallium-nitride ridge waveguide

Dvir Munk; Moshe Katzman; Ohad Westreich; Moran Bin Nun; Yedidya Lior; Noam Sicron; Yossi Paltiel; Avi Zadok

doi:10.1364/OME.8.000066

Four-wave mixing and nonlinear parameter measurement in a gallium-nitride ridge waveguide

Dvir Munk, Moshe Katzman, Ohad Westreich, Moran Bin Nun, Yedidya Lior, Noam Sicron, Yossi Paltiel, Avi Zadok

Bar-Ilan University - The Alexander Kofkin Faculty of Engineering

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Gallium-nitride (GaN) is a promising material platform for integrated electro-optic devices due to its wide direct bandgap, pronounced nonlinearities and high optical damage threshold. Low-loss ridge waveguides in GaN layers were recently demonstrated. In this work, we provide the first report of four-wave mixing in a GaN waveguide at telecommunication wavelengths, and observe comparatively high nonlinear propagation parameters. The nonlinear coefficient of the waveguide is measured as 1.6 ± 0.45 [W × m]^-1, and the corresponding third-order nonlinear parameter of GaN is estimated as 3.4 ± 1e-18 [m²/W]. The results suggest that GaN waveguides could be instrumental in nonlinear-optical signal processing applications.

Original language	English
Pages (from-to)	66-72
Number of pages	7
Journal	Optical Materials Express
Volume	8
Issue number	1
DOIs	https://doi.org/10.1364/OME.8.000066
State	Published - 2017

Bibliographical note

Publisher Copyright:
© 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.

Funding

The authors thank Dr. Arkady (Arik) Bergman of Bar-Ilan University for assistance with the experimental setup. D.M., M.K. and A.Z. acknowledge the support of the European Research Council (ERC), through Starter Grant H2020-ERC-2015-STG 679228 (L-SID).

Funders	Funder number
Horizon 2020 Framework Programme	679228
European Commission

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10.1364/OME.8.000066

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title = "Four-wave mixing and nonlinear parameter measurement in a gallium-nitride ridge waveguide",

abstract = "Gallium-nitride (GaN) is a promising material platform for integrated electro-optic devices due to its wide direct bandgap, pronounced nonlinearities and high optical damage threshold. Low-loss ridge waveguides in GaN layers were recently demonstrated. In this work, we provide the first report of four-wave mixing in a GaN waveguide at telecommunication wavelengths, and observe comparatively high nonlinear propagation parameters. The nonlinear coefficient of the waveguide is measured as 1.6 ± 0.45 [W × m]-1, and the corresponding third-order nonlinear parameter of GaN is estimated as 3.4 ± 1e-18 [m2/W]. The results suggest that GaN waveguides could be instrumental in nonlinear-optical signal processing applications.",

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AU - Munk, Dvir

AU - Katzman, Moshe

AU - Westreich, Ohad

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AU - Lior, Yedidya

AU - Sicron, Noam

AU - Paltiel, Yossi

AU - Zadok, Avi

PY - 2017

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Four-wave mixing and nonlinear parameter measurement in a gallium-nitride ridge waveguide

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