Abstract
Gallium-nitride (GaN) is a promising material platform for integrated electro-optic devices due to its wide direct bandgap, pronounced nonlinearities and high optical damage threshold. Low-loss ridge waveguides in GaN layers were recently demonstrated. In this work, we provide the first report of four-wave mixing in a GaN waveguide at telecommunication wavelengths, and observe comparatively high nonlinear propagation parameters. The nonlinear coefficient of the waveguide is measured as 1.6 ± 0.45 [W × m]-1, and the corresponding third-order nonlinear parameter of GaN is estimated as 3.4 ± 1e-18 [m2/W]. The results suggest that GaN waveguides could be instrumental in nonlinear-optical signal processing applications.
| Original language | English |
|---|---|
| Pages (from-to) | 66-72 |
| Number of pages | 7 |
| Journal | Optical Materials Express |
| Volume | 8 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2017 |
Bibliographical note
Publisher Copyright:© 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.
Funding
The authors thank Dr. Arkady (Arik) Bergman of Bar-Ilan University for assistance with the experimental setup. D.M., M.K. and A.Z. acknowledge the support of the European Research Council (ERC), through Starter Grant H2020-ERC-2015-STG 679228 (L-SID).
| Funders | Funder number |
|---|---|
| Horizon 2020 Framework Programme | 679228 |
| European Commission |