We report the fluorination of electrically insulating hexagonal boron nitride (h-BN) and the subsequent modification of its electronic band structure to a wide bandgap semiconductor via introduction of defect levels. The electrophilic nature of fluorine causes changes in the charge distribution around neighboring nitrogen atoms in h-BN, leading to room temperature weak ferromagnetism. The observations are further supported by theoretical calculations considering various possible configurations of fluorinated h-BN structure and their energy states. This unconventional magnetic semiconductor material could spur studies of stable two-dimensional magnetic semiconductors. Although the high thermal and chemical stability of h-BN have found a variety of uses, this chemical functionalization approach expands its functionality to electronic and magnetic devices.
|State||Published - 5 Jul 2017|
Bibliographical noteFunding Information:
S.R., C.S.T., and P.M.A. acknowledge the funding support from the U.S. Department of Defense: U.S. Air Force Office of Scientific Research for the Project MURI (Multi-University Research Initiative): "Synthesis and characterization of 3-D carbon nanotube solid networks" award no. FA9550-12-1-0035. A.A.M. acknowledges funds from the NSF (grant 1610175). D.D., A.S., and A.K.S. acknowledge funding from Department of Science and Technology Nano Mission. We thank "SahasraT," Cray XC40 Cluster of Supercomputer Education and Research Center and Materials Research Center, Indian Institute of Science, Bangalore for providing the required computational facilities. L.D. and C.-W.C. acknowledge funding from U.S. Air Force Office of Scientific Research Grant FA9550-15-1-0236, the T.L.L. Temple Foundation, the John J. and Rebecca Moores Endowment, and the State of Texas through the Texas Center for Superconductivity at the University of Houston.
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