Fluorinated h-BN As a magnetic semiconductor

Sruthi Radhakrishnan; Deya Das; Atanu Samanta; Carlos A. De Los Reyes; Liangzi Deng; Lawrence B. Alemany; Thomas K. Weldeghiorghis; Valery N. Khabashesku; Vidya Kochat; Zehua Jin; Parambath M. Sudeep; Angel A. Martí; Ching Wu Chu; Ajit Roy; Chandra Sekhar Tiwary; Abhishek K. Singh; Pulickel M. Ajayan

doi:10.1126/sciadv.1700842

Fluorinated h-BN As a magnetic semiconductor

Sruthi Radhakrishnan, Deya Das, Atanu Samanta, Carlos A. De Los Reyes, Liangzi Deng, Lawrence B. Alemany, Thomas K. Weldeghiorghis, Valery N. Khabashesku, Vidya Kochat, Zehua Jin, Parambath M. Sudeep, Angel A. Martí, Ching Wu Chu, Ajit Roy, Chandra Sekhar Tiwary, Abhishek K. Singh, Pulickel M. Ajayan

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125 Scopus citations

Abstract

We report the fluorination of electrically insulating hexagonal boron nitride (h-BN) and the subsequent modification of its electronic band structure to a wide bandgap semiconductor via introduction of defect levels. The electrophilic nature of fluorine causes changes in the charge distribution around neighboring nitrogen atoms in h-BN, leading to room temperature weak ferromagnetism. The observations are further supported by theoretical calculations considering various possible configurations of fluorinated h-BN structure and their energy states. This unconventional magnetic semiconductor material could spur studies of stable two-dimensional magnetic semiconductors. Although the high thermal and chemical stability of h-BN have found a variety of uses, this chemical functionalization approach expands its functionality to electronic and magnetic devices.

Original language	English
Article number	e1700842
Journal	Science advances
Volume	3
Issue number	7
DOIs	https://doi.org/10.1126/sciadv.1700842
State	Published - 5 Jul 2017
Externally published	Yes

Bibliographical note

Publisher Copyright:
© Copyright 2017 The Authors, some rights reserved.

Funding

S.R., C.S.T., and P.M.A. acknowledge the funding support from the U.S. Department of Defense: U.S. Air Force Office of Scientific Research for the Project MURI (Multi-University Research Initiative): "Synthesis and characterization of 3-D carbon nanotube solid networks" award no. FA9550-12-1-0035. A.A.M. acknowledges funds from the NSF (grant 1610175). D.D., A.S., and A.K.S. acknowledge funding from Department of Science and Technology Nano Mission. We thank "SahasraT," Cray XC40 Cluster of Supercomputer Education and Research Center and Materials Research Center, Indian Institute of Science, Bangalore for providing the required computational facilities. L.D. and C.-W.C. acknowledge funding from U.S. Air Force Office of Scientific Research Grant FA9550-15-1-0236, the T.L.L. Temple Foundation, the John J. and Rebecca Moores Endowment, and the State of Texas through the Texas Center for Superconductivity at the University of Houston.

Funders	Funder number
Cray XC40 Cluster of Supercomputer Education and Research Center and Materials Research Center
John J. and Rebecca Moores Endowment
State of Texas
T.L.L. Temple Foundation
Texas Center for Superconductivity
National Science Foundation	1610175
U.S. Department of Defense
Air Force Office of Scientific Research	FA9550-15-1-0236, FA9550-12-1-0035
National Sleep Foundation
Indiana Clinical and Translational Sciences Institute
University of Houston
National Stroke Foundation
Nano Mission Council, Department of Science and Technology

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Radhakrishnan, S., Das, D., Samanta, A., De Los Reyes, C. A., Deng, L., Alemany, L. B., Weldeghiorghis, T. K., Khabashesku, V. N., Kochat, V., Jin, Z., Sudeep, P. M., Martí, A. A., Chu, C. W., Roy, A., Tiwary, C. S., Singh, A. K., & Ajayan, P. M. (2017). Fluorinated h-BN As a magnetic semiconductor. Science advances, 3(7), Article e1700842. https://doi.org/10.1126/sciadv.1700842

@article{bf0cc5f0b7d94d82ae7c778dc02b37ba,

title = "Fluorinated h-BN As a magnetic semiconductor",

abstract = "We report the fluorination of electrically insulating hexagonal boron nitride (h-BN) and the subsequent modification of its electronic band structure to a wide bandgap semiconductor via introduction of defect levels. The electrophilic nature of fluorine causes changes in the charge distribution around neighboring nitrogen atoms in h-BN, leading to room temperature weak ferromagnetism. The observations are further supported by theoretical calculations considering various possible configurations of fluorinated h-BN structure and their energy states. This unconventional magnetic semiconductor material could spur studies of stable two-dimensional magnetic semiconductors. Although the high thermal and chemical stability of h-BN have found a variety of uses, this chemical functionalization approach expands its functionality to electronic and magnetic devices.",

author = "Sruthi Radhakrishnan and Deya Das and Atanu Samanta and {De Los Reyes}, {Carlos A.} and Liangzi Deng and Alemany, {Lawrence B.} and Weldeghiorghis, {Thomas K.} and Khabashesku, {Valery N.} and Vidya Kochat and Zehua Jin and Sudeep, {Parambath M.} and Mart{\'i}, {Angel A.} and Chu, {Ching Wu} and Ajit Roy and Tiwary, {Chandra Sekhar} and Singh, {Abhishek K.} and Ajayan, {Pulickel M.}",

year = "2017",

month = jul,

day = "5",

doi = "10.1126/sciadv.1700842",

language = "אנגלית",

volume = "3",

journal = "Science advances",

issn = "2375-2548",

publisher = "American Association for the Advancement of Science",

number = "7",

}

TY - JOUR

T1 - Fluorinated h-BN As a magnetic semiconductor

AU - Radhakrishnan, Sruthi

AU - Das, Deya

AU - Samanta, Atanu

AU - De Los Reyes, Carlos A.

AU - Deng, Liangzi

AU - Alemany, Lawrence B.

AU - Weldeghiorghis, Thomas K.

AU - Khabashesku, Valery N.

AU - Kochat, Vidya

AU - Jin, Zehua

AU - Sudeep, Parambath M.

AU - Martí, Angel A.

AU - Chu, Ching Wu

AU - Roy, Ajit

AU - Tiwary, Chandra Sekhar

AU - Singh, Abhishek K.

AU - Ajayan, Pulickel M.

PY - 2017/7/5

Y1 - 2017/7/5

N2 - We report the fluorination of electrically insulating hexagonal boron nitride (h-BN) and the subsequent modification of its electronic band structure to a wide bandgap semiconductor via introduction of defect levels. The electrophilic nature of fluorine causes changes in the charge distribution around neighboring nitrogen atoms in h-BN, leading to room temperature weak ferromagnetism. The observations are further supported by theoretical calculations considering various possible configurations of fluorinated h-BN structure and their energy states. This unconventional magnetic semiconductor material could spur studies of stable two-dimensional magnetic semiconductors. Although the high thermal and chemical stability of h-BN have found a variety of uses, this chemical functionalization approach expands its functionality to electronic and magnetic devices.

AB - We report the fluorination of electrically insulating hexagonal boron nitride (h-BN) and the subsequent modification of its electronic band structure to a wide bandgap semiconductor via introduction of defect levels. The electrophilic nature of fluorine causes changes in the charge distribution around neighboring nitrogen atoms in h-BN, leading to room temperature weak ferromagnetism. The observations are further supported by theoretical calculations considering various possible configurations of fluorinated h-BN structure and their energy states. This unconventional magnetic semiconductor material could spur studies of stable two-dimensional magnetic semiconductors. Although the high thermal and chemical stability of h-BN have found a variety of uses, this chemical functionalization approach expands its functionality to electronic and magnetic devices.

UR - http://www.scopus.com/inward/record.url?scp=85043494300&partnerID=8YFLogxK

U2 - 10.1126/sciadv.1700842

DO - 10.1126/sciadv.1700842

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

C2 - 28740867

AN - SCOPUS:85043494300

SN - 2375-2548

VL - 3

JO - Science advances

JF - Science advances

IS - 7

M1 - e1700842

ER -

Fluorinated h-BN As a magnetic semiconductor

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