Fine structure of voltage levels in the I-V characteristics of the rf SQUID's

E. Ben-Jacob; D. Abraham

doi:10.1063/1.92576

Fine structure of voltage levels in the I-V characteristics of the rf SQUID's

E. Ben-Jacob
, D. Abraham

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Results of digital numerical calculations of the rf-(SQUID) superconducting quantum interference device dynamics and I-V characteristics are presented. Fine structure of voltage levels in the I-V characteristics were found. We have introduced thermal noise effects via Langevin term in the equations of motion. The thermal noise causes transitions between the voltage levels. In the case of a SQUID with an underdamped junction, negative slope can be observed, which is due to to the transition to the lower voltage levels.

Original language	English
Pages (from-to)	835-837
Number of pages	3
Journal	Applied Physics Letters
Volume	39
Issue number	10
DOIs	https://doi.org/10.1063/1.92576
State	Published - 1981
Externally published	Yes

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@article{eac5bd045c924dc39b8d70bef314e386,

title = "Fine structure of voltage levels in the I-V characteristics of the rf SQUID's",

abstract = "Results of digital numerical calculations of the rf-(SQUID) superconducting quantum interference device dynamics and I-V characteristics are presented. Fine structure of voltage levels in the I-V characteristics were found. We have introduced thermal noise effects via Langevin term in the equations of motion. The thermal noise causes transitions between the voltage levels. In the case of a SQUID with an underdamped junction, negative slope can be observed, which is due to to the transition to the lower voltage levels.",

author = "E. Ben-Jacob and D. Abraham",

year = "1981",

doi = "10.1063/1.92576",

language = "אנגלית",

volume = "39",

pages = "835--837",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Fine structure of voltage levels in the I-V characteristics of the rf SQUID's

AU - Ben-Jacob, E.

AU - Abraham, D.

PY - 1981

Y1 - 1981

N2 - Results of digital numerical calculations of the rf-(SQUID) superconducting quantum interference device dynamics and I-V characteristics are presented. Fine structure of voltage levels in the I-V characteristics were found. We have introduced thermal noise effects via Langevin term in the equations of motion. The thermal noise causes transitions between the voltage levels. In the case of a SQUID with an underdamped junction, negative slope can be observed, which is due to to the transition to the lower voltage levels.

AB - Results of digital numerical calculations of the rf-(SQUID) superconducting quantum interference device dynamics and I-V characteristics are presented. Fine structure of voltage levels in the I-V characteristics were found. We have introduced thermal noise effects via Langevin term in the equations of motion. The thermal noise causes transitions between the voltage levels. In the case of a SQUID with an underdamped junction, negative slope can be observed, which is due to to the transition to the lower voltage levels.

UR - https://www.scopus.com/pages/publications/0040671027

U2 - 10.1063/1.92576

DO - 10.1063/1.92576

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0040671027

SN - 0003-6951

VL - 39

SP - 835

EP - 837

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Fine structure of voltage levels in the I-V characteristics of the rf SQUID's

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