Fine structure of voltage levels in the I-V characteristics of the rf SQUID's

E. Ben-Jacob, D. Abraham

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Results of digital numerical calculations of the rf-(SQUID) superconducting quantum interference device dynamics and I-V characteristics are presented. Fine structure of voltage levels in the I-V characteristics were found. We have introduced thermal noise effects via Langevin term in the equations of motion. The thermal noise causes transitions between the voltage levels. In the case of a SQUID with an underdamped junction, negative slope can be observed, which is due to to the transition to the lower voltage levels.

Original languageEnglish
Pages (from-to)835-837
Number of pages3
JournalApplied Physics Letters
Volume39
Issue number10
DOIs
StatePublished - 1981
Externally publishedYes

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