Film morphology and substrate strain contributions to ramp reversal memory in v O2

Keyphrases

• Film Substrate 100%
• Memory Effect 100%
• Film Morphology 100%
• Substrate Strain 100%
• Grain Size 66%
• Film Thickness 66%
• Memory Property 66%
• Insulator-metal Transition 66%
• Silica 33%
• Sapphire 33%
• Material Properties 33%
• Grain Boundary 33%
• Physical Mechanism 33%
• General Effects 33%
• Phase Boundary 33%
• Si Substrate 33%
• Resistance Increase 33%
• Non-volatile Memory 33%
• Strain Relaxation 33%
• Phase Coexistence 33%
• Temperature-driven 33%
• VO2 Thin Film 33%
• Vanadium Oxide 33%
• Underground Physics 33%
• Coexistence States 33%
• Temperature Ramp 33%
• NdNiO3 33%
• Film Grain 33%
• Crystalline Properties 33%
• Strain Gradient 33%
• Grain Structure 33%
• Temperature Ramping 33%
• Memory Feature 33%
• Grain Interaction 33%
• Interaction with Substrate 33%
• Reversal Process 33%
• Wet Etch Process 33%

Material Science

• Film 100%
• Memory Effect 100%
• Transition Metal 66%
• Grain Size 66%
• Film Thickness 66%
• Thin Films 66%
• Wet Etching 33%
• Sapphire 33%
• Crystal Microstructure 33%
• Crystallographic Property 33%
• Materials Property 33%
• Grain Boundary 33%