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Ferroelectric Exchange Bias Affects Interfacial Electronic States
Gal Tuvia
, Yiftach Frenkel
, Prasanna K. Rout
, Itai Silber
,
Beena Kalisky
, Yoram Dagan
Department of Physics - at Bar-Ilan University
Tel Aviv University
Research output
:
Contribution to journal
›
Article
›
peer-review
13
Scopus citations
Overview
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Keyphrases
Exchange Bias
100%
Interfacial Electronic Structure
100%
Intrinsic Bias
100%
Superconducting Quantum Interference Device (SQUID)
66%
LaAlO3
66%
Current Flow
66%
Polar Oxides
66%
Superconducting Properties
33%
Magnetism
33%
Low Temperature
33%
Local Imaging
33%
Superconductivity
33%
Gate Voltage
33%
Superconducting State
33%
Structural Domains
33%
Hysteretic
33%
Control Method
33%
Ferroelectric Oxides
33%
Quantum Hall State
33%
Doped SrTiO3
33%
Memory Device
33%
Anomalous Behavior
33%
Ferroelectric Materials
33%
Electrical Transport
33%
Mutual Effect
33%
Interface Resistance
33%
Polar Structure
33%
State Property
33%
Interface Phenomena
33%
Ca Doping
33%
Polar Discontinuity
33%
Polar Oxide Interfaces
33%
Engineering
Current Flow
100%
Electronic State
100%
Low-Temperature
50%
Constrains
50%
Gate Voltage
50%
Structural Domain
50%
Initial State
50%
Superconductivity
50%
Material Science
Ferroelectric Material
100%
Oxide Compound
75%
SQUID (Device)
50%
Ferroelectricity
50%
Superconductivity
25%
Magnetism
25%
Oxide Interface
25%
Electrical Resistivity
25%