TY - JOUR
T1 - Fast optoelectronic responsivity of metal-oxide-semiconductor nanostructures
AU - Bennett, Aviya
AU - Chelly, Avraham
AU - Karsenty, Avi
AU - Gadasi, Ilan
AU - Priel, Zvi
AU - Mandelbaum, Yaakov
AU - Lu, Tiecheng
AU - Shlimak, Issai
AU - Zalevsky, Zeev
N1 - Publisher Copyright:
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE).
PY - 2016/7/1
Y1 - 2016/7/1
N2 - The frequency dependence of the capacitance variation between dark and near-infrared-modulated illumination conditions is measured for metal-oxide-semiconductor structures with germanium nanocrystals embedded in a thick SiO2 film grown on a silicon substrate. The results have shown that the device is expected to be sensitive at high frequencies (up to 111 GHz) making it a good candidate for optoelectronic high-speed use and for optical communication applications.
AB - The frequency dependence of the capacitance variation between dark and near-infrared-modulated illumination conditions is measured for metal-oxide-semiconductor structures with germanium nanocrystals embedded in a thick SiO2 film grown on a silicon substrate. The results have shown that the device is expected to be sensitive at high frequencies (up to 111 GHz) making it a good candidate for optoelectronic high-speed use and for optical communication applications.
KW - Metal-oxide-semiconductor capacitor
KW - capacitance-voltage measurement
KW - germanium
KW - nanocrystal
KW - optoelectronic effect
UR - http://www.scopus.com/inward/record.url?scp=84978650023&partnerID=8YFLogxK
U2 - 10.1117/1.jnp.10.036001
DO - 10.1117/1.jnp.10.036001
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AN - SCOPUS:84978650023
SN - 1934-2608
VL - 10
JO - Journal of Nanophotonics
JF - Journal of Nanophotonics
IS - 3
M1 - 036001
ER -