Fast optoelectronic responsivity of metal-oxide-semiconductor nanostructures

Aviya Bennett, Avraham Chelly, Avi Karsenty, Ilan Gadasi, Zvi Priel, Yaakov Mandelbaum, Tiecheng Lu, Issai Shlimak, Zeev Zalevsky

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


The frequency dependence of the capacitance variation between dark and near-infrared-modulated illumination conditions is measured for metal-oxide-semiconductor structures with germanium nanocrystals embedded in a thick SiO2 film grown on a silicon substrate. The results have shown that the device is expected to be sensitive at high frequencies (up to 111 GHz) making it a good candidate for optoelectronic high-speed use and for optical communication applications.

Original languageEnglish
Article number036001
JournalJournal of Nanophotonics
Issue number3
StatePublished - 1 Jul 2016

Bibliographical note

Publisher Copyright:
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE).


  • Metal-oxide-semiconductor capacitor
  • capacitance-voltage measurement
  • germanium
  • nanocrystal
  • optoelectronic effect


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