TY - JOUR
T1 - Fabrication of sub-μm bipolar transistor structures by scanning probe microscopy
AU - Richter, Shachar
AU - Cahen, David
AU - Cohen, Sidney R.
AU - Gartsman, Konstantin
AU - Lyakhovitskaya, Vera
AU - Manassen, Yishay
PY - 1998
Y1 - 1998
N2 - We show how sub-μm sized transistor structures (down to 50 nm cross section) can be fabricated by thermally assisted electromigration of mobile dopants inside the semiconductor CuInSe2. Small device structures are fabricated by application of an electric field to the sample via the contact, defined by a conducting atomic force microscope tip. The structures are characterized by nm scale scanning spreading resistance and scanning capacitance measurements to reveal the inhomogeneous doping profiles created by the electric field.
AB - We show how sub-μm sized transistor structures (down to 50 nm cross section) can be fabricated by thermally assisted electromigration of mobile dopants inside the semiconductor CuInSe2. Small device structures are fabricated by application of an electric field to the sample via the contact, defined by a conducting atomic force microscope tip. The structures are characterized by nm scale scanning spreading resistance and scanning capacitance measurements to reveal the inhomogeneous doping profiles created by the electric field.
UR - http://www.scopus.com/inward/record.url?scp=0005549936&partnerID=8YFLogxK
U2 - 10.1063/1.122309
DO - 10.1063/1.122309
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AN - SCOPUS:0005549936
SN - 0003-6951
VL - 73
SP - 1868
EP - 1870
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 13
ER -