Fabrication of reproducible, integration-compatible hybrid molecular/Si electronics

Keyphrases

• N-Si 100%
• Conductance 50%
• Tunneling 50%
• Molecular Electronics 50%
• Semiconductor Junctions 50%
• Silica 50%
• Room Temperature 50%
• Temperature Effect 50%
• Current Density 50%
• Diameter Change 50%
• Edge Effect 50%
• Standard CMOS Technology 50%
• Doping Level 50%
• Modified Surface 50%
• Device Fabrication 50%
• Schottky 50%
• Hexadecane 50%
• Oxide-free 50%
• α-methylstyrene 50%
• Si(111) Surface 50%
• Molecular Junctions 50%
• Chemical Changes 50%
• Tunneling Barrier 50%
• Si-C 50%
• Top Contact 50%
• Lateral Size 50%
• Surface Dipole 50%
• Edge Defects 50%
• Si-based 50%
• Si Doping 50%
• Molecular Monolayer 50%
• Highly Doped Si 50%

Material Science

• Monolayers 100%
• Density 100%
• Device Fabrication 100%
• Oxide Compound 100%