Extended stable junction regions in CuInSe2 thin films by electric field application

Konstantin Gartsman; David Cahen; Roland Scheer; Isabel Gavilanes Perez

doi:10.1016/s0040-6090(03)00272-4

Extended stable junction regions in CuInSe₂ thin films by electric field application

Konstantin Gartsman, David Cahen, Roland Scheer, Isabel Gavilanes Perez

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Epitaxial films of CuInSe₂ on Si(1 1 1) were modified by the application of an electric field through a movable tip. The electric field induces stable junction regions which are identified by separation and collection of electron beam-induced charge carriers. The movable tip allows scribing of these junction regions and one-sided connection to a contact pad. The junction formation is mainly due to electric field application and, in contrast to what was found to be the case for bulk samples, is not accompanied by a significant temperature rise. The junctions can be explained by symmetrical p/p⁺/n/p⁺/p regions formed within the CuInSe₂ epilayers. The reported method presents a new way for junction patterning in two dimensions.

Original language	English
Pages (from-to)	284-288
Number of pages	5
Journal	Thin Solid Films
Volume	431-432
DOIs	https://doi.org/10.1016/s0040-6090(03)00272-4
State	Published - 1 May 2003
Externally published	Yes
Event	Proceedings of Symposium B - Strasbourg, France Duration: 18 Jun 2002 → 21 Jun 2002

Funding

KG and RS thank the NATO Science Foundation for support. KG and DC thank the Weizmann Institute for support.

Funders
NATO Science Foundation

Keywords

CuInSe
Diffusion
Thin film

Access to Document

10.1016/s0040-6090(03)00272-4

Cite this

@article{0138ca615d2645db9157f3c3664b21fb,

title = "Extended stable junction regions in CuInSe2 thin films by electric field application",

abstract = "Epitaxial films of CuInSe2 on Si(1 1 1) were modified by the application of an electric field through a movable tip. The electric field induces stable junction regions which are identified by separation and collection of electron beam-induced charge carriers. The movable tip allows scribing of these junction regions and one-sided connection to a contact pad. The junction formation is mainly due to electric field application and, in contrast to what was found to be the case for bulk samples, is not accompanied by a significant temperature rise. The junctions can be explained by symmetrical p/p+/n/p+/p regions formed within the CuInSe2 epilayers. The reported method presents a new way for junction patterning in two dimensions.",

keywords = "CuInSe, Diffusion, Thin film",

author = "Konstantin Gartsman and David Cahen and Roland Scheer and Perez, \{Isabel Gavilanes\}",

year = "2003",

month = may,

day = "1",

doi = "10.1016/s0040-6090(03)00272-4",

language = "אנגלית",

volume = "431-432",

pages = "284--288",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

note = "Proceedings of Symposium B ; Conference date: 18-06-2002 Through 21-06-2002",

}

TY - JOUR

T1 - Extended stable junction regions in CuInSe2 thin films by electric field application

AU - Gartsman, Konstantin

AU - Cahen, David

AU - Scheer, Roland

AU - Perez, Isabel Gavilanes

PY - 2003/5/1

Y1 - 2003/5/1

N2 - Epitaxial films of CuInSe2 on Si(1 1 1) were modified by the application of an electric field through a movable tip. The electric field induces stable junction regions which are identified by separation and collection of electron beam-induced charge carriers. The movable tip allows scribing of these junction regions and one-sided connection to a contact pad. The junction formation is mainly due to electric field application and, in contrast to what was found to be the case for bulk samples, is not accompanied by a significant temperature rise. The junctions can be explained by symmetrical p/p+/n/p+/p regions formed within the CuInSe2 epilayers. The reported method presents a new way for junction patterning in two dimensions.

AB - Epitaxial films of CuInSe2 on Si(1 1 1) were modified by the application of an electric field through a movable tip. The electric field induces stable junction regions which are identified by separation and collection of electron beam-induced charge carriers. The movable tip allows scribing of these junction regions and one-sided connection to a contact pad. The junction formation is mainly due to electric field application and, in contrast to what was found to be the case for bulk samples, is not accompanied by a significant temperature rise. The junctions can be explained by symmetrical p/p+/n/p+/p regions formed within the CuInSe2 epilayers. The reported method presents a new way for junction patterning in two dimensions.

KW - CuInSe

KW - Diffusion

KW - Thin film

UR - https://www.scopus.com/pages/publications/0038018487

U2 - 10.1016/s0040-6090(03)00272-4

DO - 10.1016/s0040-6090(03)00272-4

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???

AN - SCOPUS:0038018487

SN - 0040-6090

VL - 431-432

SP - 284

EP - 288

JO - Thin Solid Films

JF - Thin Solid Films

T2 - Proceedings of Symposium B

Y2 - 18 June 2002 through 21 June 2002

ER -