Extended stable junction regions in CuInSe2 thin films by electric field application

Konstantin Gartsman, David Cahen, Roland Scheer, Isabel Gavilanes Perez

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


Epitaxial films of CuInSe2 on Si(1 1 1) were modified by the application of an electric field through a movable tip. The electric field induces stable junction regions which are identified by separation and collection of electron beam-induced charge carriers. The movable tip allows scribing of these junction regions and one-sided connection to a contact pad. The junction formation is mainly due to electric field application and, in contrast to what was found to be the case for bulk samples, is not accompanied by a significant temperature rise. The junctions can be explained by symmetrical p/p+/n/p+/p regions formed within the CuInSe2 epilayers. The reported method presents a new way for junction patterning in two dimensions.

Original languageEnglish
Pages (from-to)284-288
Number of pages5
JournalThin Solid Films
StatePublished - 1 May 2003
Externally publishedYes
EventProceedings of Symposium B - Strasbourg, France
Duration: 18 Jun 200221 Jun 2002


  • CuInSe
  • Diffusion
  • Thin film


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