Extended stable junction regions in CuInSe2 thin films by electric field application

Konstantin Gartsman; David Cahen; Roland Scheer; Isabel Gavilanes Perez

doi:10.1016/S0040-6090(03)00272-4

Extended stable junction regions in CuInSe₂ thin films by electric field application

Konstantin Gartsman, David Cahen, Roland Scheer, Isabel Gavilanes Perez

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Epitaxial films of CuInSe₂ on Si(1 1 1) were modified by the application of an electric field through a movable tip. The electric field induces stable junction regions which are identified by separation and collection of electron beam-induced charge carriers. The movable tip allows scribing of these junction regions and one-sided connection to a contact pad. The junction formation is mainly due to electric field application and, in contrast to what was found to be the case for bulk samples, is not accompanied by a significant temperature rise. The junctions can be explained by symmetrical p/p⁺/n/p⁺/p regions formed within the CuInSe₂ epilayers. The reported method presents a new way for junction patterning in two dimensions.

Original language	English
Pages (from-to)	284-288
Number of pages	5
Journal	Thin Solid Films
Volume	431-432
DOIs	https://doi.org/10.1016/S0040-6090(03)00272-4
State	Published - 1 May 2003
Externally published	Yes
Event	Proceedings of Symposium B - Strasbourg, France Duration: 18 Jun 2002 → 21 Jun 2002

Keywords

CuInSe
Diffusion
Thin film

Access to Document

10.1016/S0040-6090(03)00272-4

Cite this

@article{0138ca615d2645db9157f3c3664b21fb,

title = "Extended stable junction regions in CuInSe2 thin films by electric field application",

abstract = "Epitaxial films of CuInSe2 on Si(1 1 1) were modified by the application of an electric field through a movable tip. The electric field induces stable junction regions which are identified by separation and collection of electron beam-induced charge carriers. The movable tip allows scribing of these junction regions and one-sided connection to a contact pad. The junction formation is mainly due to electric field application and, in contrast to what was found to be the case for bulk samples, is not accompanied by a significant temperature rise. The junctions can be explained by symmetrical p/p+/n/p+/p regions formed within the CuInSe2 epilayers. The reported method presents a new way for junction patterning in two dimensions.",

keywords = "CuInSe, Diffusion, Thin film",

author = "Konstantin Gartsman and David Cahen and Roland Scheer and Perez, {Isabel Gavilanes}",

year = "2003",

month = may,

day = "1",

doi = "10.1016/S0040-6090(03)00272-4",

language = "אנגלית",

volume = "431-432",

pages = "284--288",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

note = "Proceedings of Symposium B ; Conference date: 18-06-2002 Through 21-06-2002",

}

TY - JOUR

T1 - Extended stable junction regions in CuInSe2 thin films by electric field application

AU - Gartsman, Konstantin

AU - Cahen, David

AU - Scheer, Roland

AU - Perez, Isabel Gavilanes

PY - 2003/5/1

Y1 - 2003/5/1

N2 - Epitaxial films of CuInSe2 on Si(1 1 1) were modified by the application of an electric field through a movable tip. The electric field induces stable junction regions which are identified by separation and collection of electron beam-induced charge carriers. The movable tip allows scribing of these junction regions and one-sided connection to a contact pad. The junction formation is mainly due to electric field application and, in contrast to what was found to be the case for bulk samples, is not accompanied by a significant temperature rise. The junctions can be explained by symmetrical p/p+/n/p+/p regions formed within the CuInSe2 epilayers. The reported method presents a new way for junction patterning in two dimensions.

AB - Epitaxial films of CuInSe2 on Si(1 1 1) were modified by the application of an electric field through a movable tip. The electric field induces stable junction regions which are identified by separation and collection of electron beam-induced charge carriers. The movable tip allows scribing of these junction regions and one-sided connection to a contact pad. The junction formation is mainly due to electric field application and, in contrast to what was found to be the case for bulk samples, is not accompanied by a significant temperature rise. The junctions can be explained by symmetrical p/p+/n/p+/p regions formed within the CuInSe2 epilayers. The reported method presents a new way for junction patterning in two dimensions.

KW - CuInSe

KW - Diffusion

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=0038018487&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(03)00272-4

DO - 10.1016/S0040-6090(03)00272-4

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???

AN - SCOPUS:0038018487

SN - 0040-6090

VL - 431-432

SP - 284

EP - 288

JO - Thin Solid Films

JF - Thin Solid Films

T2 - Proceedings of Symposium B

Y2 - 18 June 2002 through 21 June 2002

ER -

Extended stable junction regions in CuInSe₂ thin films by electric field application

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this