Extended Exploration of Low Granularity Back Biasing Control in 28nm UTBB FD-SOI Technology

Keyphrases

• 8-bit 25%
• Area Occupancy 25%
• Back Bias 100%
• Back-bias Control 25%
• Basic Logic 25%
• Body Bias Control 25%
• CMOS Design 50%
• Control Method 25%
• Conventional CMOS 50%
• Delay Reduction 25%
• Dynamic Threshold Voltage 50%
• Energy Consumption 25%
• Energy Improvement 25%
• Equivalent Dynamics 25%
• FDSOI 100%
• Granularity 100%
• High Efficiency 25%
• Layout Strategy 25%
• Logic Gates 25%
• Low Voltage 25%
• MOSFET 50%
• Performance Improvement 25%
• Post-layout Simulation 25%
• Process Variation 25%
• Proposed Strategy 25%
• Ripple Carry Adder 25%
• Silicon Area 25%
• Silicon on Insulator Technology 100%
• Single Well 25%
• Supply Voltage 25%
• Temperature Variation 25%
• Ultra-thin Body 100%
• Well Layout 25%

Engineering

• Adders 50%
• Energy Engineering 75%
• Granularity 100%
• Layout Strategy 25%
• Logic Gate 25%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• Silicon on Insulator Technology 100%
• Supply Voltage 25%

Computer Science

• Energy Consumption 25%
• Granularity 100%
• Logic Gate 25%
• Ripple-Carry Adder 25%
• Supply Voltage 25%
• Threshold Voltage 50%