Exploring back biasing opportunities in 28nm UTBB FD-SOI technology for subthreshold digital design

Ramiro Taco; Itamar Levi; Alex Fish; Marco Lanuzza

doi:10.1109/eeei.2014.7005822

Exploring back biasing opportunities in 28nm UTBB FD-SOI technology for subthreshold digital design

Ramiro Taco, Itamar Levi, Alex Fish, Marco Lanuzza

University of Calabria

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

15 Scopus citations

Abstract

Ultra-Thin Body and Box Fully Depleted silicon on insulator (UTBB FD-SOI) has been identified as attractive technology that respond to market trends in mobile applications. Digital subthreshold design techniques allow to operate at the minimum energy point, thus leading to considerable energy savings. In this work, the impact of back biasing is analyzed for the subthreshold region with different threshold voltage device options. We show that back biasing is an effective knob to achieve the minimum energy point when either high or low performance is demanded. By applying forward back bias voltage of 1.5 V to low threshold voltage transistors we achieved a frequency boost by 8.23× while maintaining the same consumed energy per cycle. Using regular threshold voltage transistors reversed back biased by 1.5 V, the leakage current was reduced 13.5x. Furthermore, we show that a single p-well approach should be used when no back biasing is needed in the subthreshold regime.

Original language	English
Title of host publication	2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479959877
DOIs	https://doi.org/10.1109/eeei.2014.7005822
State	Published - 2014
Event	2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014 - Eilat, Israel Duration: 3 Dec 2014 → 5 Dec 2014

Publication series

Name	2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014

Conference

Conference	2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014
Country/Territory	Israel
City	Eilat
Period	3/12/14 → 5/12/14

Bibliographical note

Publisher Copyright:
© Copyright 2015 IEEE All rights reserved.

Keywords

28nm UTBB FD-SOI
Back biasing
Single Well
Subthreshold digital design

Access to Document

10.1109/eeei.2014.7005822

Cite this

Taco, R., Levi, I., Fish, A., & Lanuzza, M. (2014). Exploring back biasing opportunities in 28nm UTBB FD-SOI technology for subthreshold digital design. In 2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014 Article 7005822 (2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/eeei.2014.7005822

Taco, Ramiro ; Levi, Itamar ; Fish, Alex et al. / Exploring back biasing opportunities in 28nm UTBB FD-SOI technology for subthreshold digital design. 2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014. Institute of Electrical and Electronics Engineers Inc., 2014. (2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014).

@inproceedings{8cc2516cc14c409ba6eebb28b5db3fa6,

title = "Exploring back biasing opportunities in 28nm UTBB FD-SOI technology for subthreshold digital design",

abstract = "Ultra-Thin Body and Box Fully Depleted silicon on insulator (UTBB FD-SOI) has been identified as attractive technology that respond to market trends in mobile applications. Digital subthreshold design techniques allow to operate at the minimum energy point, thus leading to considerable energy savings. In this work, the impact of back biasing is analyzed for the subthreshold region with different threshold voltage device options. We show that back biasing is an effective knob to achieve the minimum energy point when either high or low performance is demanded. By applying forward back bias voltage of 1.5 V to low threshold voltage transistors we achieved a frequency boost by 8.23× while maintaining the same consumed energy per cycle. Using regular threshold voltage transistors reversed back biased by 1.5 V, the leakage current was reduced 13.5x. Furthermore, we show that a single p-well approach should be used when no back biasing is needed in the subthreshold regime.",

keywords = "28nm UTBB FD-SOI, Back biasing, Single Well, Subthreshold digital design",

author = "Ramiro Taco and Itamar Levi and Alex Fish and Marco Lanuzza",

note = "Publisher Copyright: {\textcopyright} Copyright 2015 IEEE All rights reserved.; 2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014 ; Conference date: 03-12-2014 Through 05-12-2014",

year = "2014",

doi = "10.1109/eeei.2014.7005822",

language = "אנגלית",

series = "2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014",

address = "ארצות הברית",

}

Taco, R, Levi, I , Fish, A & Lanuzza, M 2014, Exploring back biasing opportunities in 28nm UTBB FD-SOI technology for subthreshold digital design. in 2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014., 7005822, 2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014, Institute of Electrical and Electronics Engineers Inc., 2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014, Eilat, Israel, 3/12/14. https://doi.org/10.1109/eeei.2014.7005822

Exploring back biasing opportunities in 28nm UTBB FD-SOI technology for subthreshold digital design. / Taco, Ramiro; Levi, Itamar ; Fish, Alex et al.
2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 7005822 (2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Exploring back biasing opportunities in 28nm UTBB FD-SOI technology for subthreshold digital design

AU - Taco, Ramiro

AU - Levi, Itamar

AU - Fish, Alex

AU - Lanuzza, Marco

PY - 2014

Y1 - 2014

N2 - Ultra-Thin Body and Box Fully Depleted silicon on insulator (UTBB FD-SOI) has been identified as attractive technology that respond to market trends in mobile applications. Digital subthreshold design techniques allow to operate at the minimum energy point, thus leading to considerable energy savings. In this work, the impact of back biasing is analyzed for the subthreshold region with different threshold voltage device options. We show that back biasing is an effective knob to achieve the minimum energy point when either high or low performance is demanded. By applying forward back bias voltage of 1.5 V to low threshold voltage transistors we achieved a frequency boost by 8.23× while maintaining the same consumed energy per cycle. Using regular threshold voltage transistors reversed back biased by 1.5 V, the leakage current was reduced 13.5x. Furthermore, we show that a single p-well approach should be used when no back biasing is needed in the subthreshold regime.

AB - Ultra-Thin Body and Box Fully Depleted silicon on insulator (UTBB FD-SOI) has been identified as attractive technology that respond to market trends in mobile applications. Digital subthreshold design techniques allow to operate at the minimum energy point, thus leading to considerable energy savings. In this work, the impact of back biasing is analyzed for the subthreshold region with different threshold voltage device options. We show that back biasing is an effective knob to achieve the minimum energy point when either high or low performance is demanded. By applying forward back bias voltage of 1.5 V to low threshold voltage transistors we achieved a frequency boost by 8.23× while maintaining the same consumed energy per cycle. Using regular threshold voltage transistors reversed back biased by 1.5 V, the leakage current was reduced 13.5x. Furthermore, we show that a single p-well approach should be used when no back biasing is needed in the subthreshold regime.

KW - 28nm UTBB FD-SOI

KW - Back biasing

KW - Single Well

KW - Subthreshold digital design

UR - http://www.scopus.com/inward/record.url?scp=84941248157&partnerID=8YFLogxK

U2 - 10.1109/eeei.2014.7005822

DO - 10.1109/eeei.2014.7005822

M3 - ???researchoutput.researchoutputtypes.contributiontobookanthology.conference???

AN - SCOPUS:84941248157

T3 - 2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014

BT - 2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014

Y2 - 3 December 2014 through 5 December 2014

ER -

Taco R, Levi I , Fish A, Lanuzza M. Exploring back biasing opportunities in 28nm UTBB FD-SOI technology for subthreshold digital design. In 2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7005822. (2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014). doi: 10.1109/eeei.2014.7005822

Exploring back biasing opportunities in 28nm UTBB FD-SOI technology for subthreshold digital design

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this