Excimkr lasfr annealinc of amorphous silicon films

J. Viatlla, R. K. Singh, R. P.S. Thakur

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Low temperature processing is necessary for the fabrication of thin-film transistors for electronics-on-glass applications, including active matrix flat-panel displays. One method to achieve this involves the use of pulsed excimer-laser annealing of an amorphous silicon layer on top of an SiO 2 layer. The intense UV laser is absorbed in the amorphous silicon region, maintaining a low average temperature. The thickness of the underlying SiO2 layer affects the solidification velocity and hence the grain size of the annealed layer. Previous work has concluded that the resultant grain si/e is small (<100 nm) and further work is needed in finding ways of increasing grain size. This paper describes how grain size is affected by varying the thickness of the SiO2 layer. Correlations will be discussed between the solidification velocities and grain size as affected by the varying thickness of the SiO2 layer. The paper includes a comparison between experimental and theoretical results, using equations based on energy balance considerations.

Original languageEnglish
Title of host publicationAmorphous Silicon Technology - 1994
Pages61-66
Number of pages6
StatePublished - 1994
Externally publishedYes
Event1994 MRS Spring Meeting - San Francisco, CA, United States
Duration: 4 Apr 19948 Apr 1994

Publication series

NameMaterials Research Society Symposium Proceedings
Volume336
ISSN (Print)0272-9172

Conference

Conference1994 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period4/04/948/04/94

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