Abstract
It is demonstrated that the recent low-temperature electrical resistivity data for aluminum provide experimental evidence for the presence of a T2 contribution to the electrical resistivity due to electron-electron scattering.
| Original language | English |
|---|---|
| Pages (from-to) | 89-90 |
| Number of pages | 2 |
| Journal | Physics Letters, Section A: General, Atomic and Solid State Physics |
| Volume | 51 |
| Issue number | 2 |
| DOIs | |
| State | Published - 10 Feb 1975 |
Bibliographical note
Funding Information:* Research supported in part by the Israel Commission for Basic Research and by the Rat-Sheva de Rothschild Fund for the Advancement of Sdence and Technology.
Funding
* Research supported in part by the Israel Commission for Basic Research and by the Rat-Sheva de Rothschild Fund for the Advancement of Sdence and Technology.
| Funders |
|---|
| Israel Commission for Basic Research |
| Rat-Sheva de Rothschild Fund |
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