Abstract
It is demonstrated that the recent low-temperature electrical resistivity data for aluminum provide experimental evidence for the presence of a T2 contribution to the electrical resistivity due to electron-electron scattering.
Original language | English |
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Pages (from-to) | 89-90 |
Number of pages | 2 |
Journal | Physics Letters, Section A: General, Atomic and Solid State Physics |
Volume | 51 |
Issue number | 2 |
DOIs | |
State | Published - 10 Feb 1975 |
Bibliographical note
Funding Information:* Research supported in part by the Israel Commission for Basic Research and by the Rat-Sheva de Rothschild Fund for the Advancement of Sdence and Technology.
Funding
* Research supported in part by the Israel Commission for Basic Research and by the Rat-Sheva de Rothschild Fund for the Advancement of Sdence and Technology.
Funders | Funder number |
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Israel Commission for Basic Research | |
Rat-Sheva de Rothschild Fund |