Evaluation of subsurface damage inherent to polished GaN substrates using depth-resolved cathodoluminescence spectroscopy

Jinhyung Lee; Jong Cheol Kim; Jongsik Kim; Rajiv K. Singh; Arul C. Arjunan; Haigun Lee

doi:10.1016/j.tsf.2018.07.002

Evaluation of subsurface damage inherent to polished GaN substrates using depth-resolved cathodoluminescence spectroscopy

Jinhyung Lee, Jong Cheol Kim, Jongsik Kim, Rajiv K. Singh, Arul C. Arjunan, Haigun Lee

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The extent of subsurface damage on (0001) GaN wafers post different polishing treatments was quantified using depth-resolved cathodoluminescence spectroscopy (DRCLS). The band edge emission spectra were obtained from CLS with different electron energies, which manifested a significant non-radiative recombination resulted from polishing-induced subsurface damage. Cross-sectional transmission electron microscopy (XTEM) was also used to diagnose the extent of the subsurface damage layer. For the GaN polished with 1.00 and 0.25 μm diamonds abrasive, the extent of non-radiative subsurface damage is about 250 and 100 nm, corresponding to the calculated electron penetration depth at the accelerating voltage for the onset of band edge emission. In this study, the depth of subsurface damage estimated from CL spectra compared well with direct XTEM measurements in GaN substrate.

Original language	English
Pages (from-to)	516-520
Number of pages	5
Journal	Thin Solid Films
Volume	660
DOIs	https://doi.org/10.1016/j.tsf.2018.07.002
State	Published - 30 Aug 2018
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2018

Funding

The authors are grateful for the support received from projects NSF SBIR#0646586 and DOE SBIR/STTR DESC0004190 , DESC0006438 , DESC0007740 and FHTCC to carry out this work. The authors also acknowledge the Nanoscale Research Facility and Major Analytical Instrumentation Center at the University of Florida for use of the characterization equipment used for this work. The authors are grateful for the support received from projects NSF SBIR#0646586 and DOE SBIR/STTR DESC0004190, DESC0006438, DESC0007740 and FHTCC to carry out this work. The authors also acknowledge the Nanoscale Research Facility and Major Analytical Instrumentation Center at the University of Florida for use of the characterization equipment used for this work.

Funders	Funder number
National Science Foundation
U.S. Department of Energy	DESC0007740, DESC0006438, SBIR/STTR DESC0004190
Directorate for Engineering	0646586
National Science Foundation	SBIR#0646586

Keywords

Cathodoluminescence spectroscopy
Chemical mechanical polishing
Gallium nitride
Non-radiative recombination
Subsurface damage

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10.1016/j.tsf.2018.07.002

Cite this

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title = "Evaluation of subsurface damage inherent to polished GaN substrates using depth-resolved cathodoluminescence spectroscopy",

abstract = "The extent of subsurface damage on (0001) GaN wafers post different polishing treatments was quantified using depth-resolved cathodoluminescence spectroscopy (DRCLS). The band edge emission spectra were obtained from CLS with different electron energies, which manifested a significant non-radiative recombination resulted from polishing-induced subsurface damage. Cross-sectional transmission electron microscopy (XTEM) was also used to diagnose the extent of the subsurface damage layer. For the GaN polished with 1.00 and 0.25 μm diamonds abrasive, the extent of non-radiative subsurface damage is about 250 and 100 nm, corresponding to the calculated electron penetration depth at the accelerating voltage for the onset of band edge emission. In this study, the depth of subsurface damage estimated from CL spectra compared well with direct XTEM measurements in GaN substrate.",

keywords = "Cathodoluminescence spectroscopy, Chemical mechanical polishing, Gallium nitride, Non-radiative recombination, Subsurface damage",

author = "Jinhyung Lee and Kim, {Jong Cheol} and Jongsik Kim and Singh, {Rajiv K.} and Arjunan, {Arul C.} and Haigun Lee",

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doi = "10.1016/j.tsf.2018.07.002",

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T1 - Evaluation of subsurface damage inherent to polished GaN substrates using depth-resolved cathodoluminescence spectroscopy

AU - Lee, Jinhyung

AU - Kim, Jong Cheol

AU - Kim, Jongsik

AU - Singh, Rajiv K.

AU - Arjunan, Arul C.

AU - Lee, Haigun

PY - 2018/8/30

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N2 - The extent of subsurface damage on (0001) GaN wafers post different polishing treatments was quantified using depth-resolved cathodoluminescence spectroscopy (DRCLS). The band edge emission spectra were obtained from CLS with different electron energies, which manifested a significant non-radiative recombination resulted from polishing-induced subsurface damage. Cross-sectional transmission electron microscopy (XTEM) was also used to diagnose the extent of the subsurface damage layer. For the GaN polished with 1.00 and 0.25 μm diamonds abrasive, the extent of non-radiative subsurface damage is about 250 and 100 nm, corresponding to the calculated electron penetration depth at the accelerating voltage for the onset of band edge emission. In this study, the depth of subsurface damage estimated from CL spectra compared well with direct XTEM measurements in GaN substrate.

AB - The extent of subsurface damage on (0001) GaN wafers post different polishing treatments was quantified using depth-resolved cathodoluminescence spectroscopy (DRCLS). The band edge emission spectra were obtained from CLS with different electron energies, which manifested a significant non-radiative recombination resulted from polishing-induced subsurface damage. Cross-sectional transmission electron microscopy (XTEM) was also used to diagnose the extent of the subsurface damage layer. For the GaN polished with 1.00 and 0.25 μm diamonds abrasive, the extent of non-radiative subsurface damage is about 250 and 100 nm, corresponding to the calculated electron penetration depth at the accelerating voltage for the onset of band edge emission. In this study, the depth of subsurface damage estimated from CL spectra compared well with direct XTEM measurements in GaN substrate.

KW - Cathodoluminescence spectroscopy

KW - Chemical mechanical polishing

KW - Gallium nitride

KW - Non-radiative recombination

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Evaluation of subsurface damage inherent to polished GaN substrates using depth-resolved cathodoluminescence spectroscopy

Abstract

Bibliographical note

Funding

Keywords

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