Evaluation of subsurface damage inherent to polished GaN substrates using depth-resolved cathodoluminescence spectroscopy

Jinhyung Lee, Jong Cheol Kim, Jongsik Kim, Rajiv K. Singh, Arul C. Arjunan, Haigun Lee

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The extent of subsurface damage on (0001) GaN wafers post different polishing treatments was quantified using depth-resolved cathodoluminescence spectroscopy (DRCLS). The band edge emission spectra were obtained from CLS with different electron energies, which manifested a significant non-radiative recombination resulted from polishing-induced subsurface damage. Cross-sectional transmission electron microscopy (XTEM) was also used to diagnose the extent of the subsurface damage layer. For the GaN polished with 1.00 and 0.25 μm diamonds abrasive, the extent of non-radiative subsurface damage is about 250 and 100 nm, corresponding to the calculated electron penetration depth at the accelerating voltage for the onset of band edge emission. In this study, the depth of subsurface damage estimated from CL spectra compared well with direct XTEM measurements in GaN substrate.

Original languageEnglish
Pages (from-to)516-520
Number of pages5
JournalThin Solid Films
Volume660
DOIs
StatePublished - 30 Aug 2018
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2018

Funding

The authors are grateful for the support received from projects NSF SBIR#0646586 and DOE SBIR/STTR DESC0004190 , DESC0006438 , DESC0007740 and FHTCC to carry out this work. The authors also acknowledge the Nanoscale Research Facility and Major Analytical Instrumentation Center at the University of Florida for use of the characterization equipment used for this work. The authors are grateful for the support received from projects NSF SBIR#0646586 and DOE SBIR/STTR DESC0004190, DESC0006438, DESC0007740 and FHTCC to carry out this work. The authors also acknowledge the Nanoscale Research Facility and Major Analytical Instrumentation Center at the University of Florida for use of the characterization equipment used for this work.

FundersFunder number
National Science Foundation
U.S. Department of EnergyDESC0007740, DESC0006438, SBIR/STTR DESC0004190
Directorate for Engineering0646586
National Science FoundationSBIR#0646586

    Keywords

    • Cathodoluminescence spectroscopy
    • Chemical mechanical polishing
    • Gallium nitride
    • Non-radiative recombination
    • Subsurface damage

    Fingerprint

    Dive into the research topics of 'Evaluation of subsurface damage inherent to polished GaN substrates using depth-resolved cathodoluminescence spectroscopy'. Together they form a unique fingerprint.

    Cite this