Abstract
Irradiated silicon carbide (SiC) exhibits higher carrier content but a decrease in conductivity with increased irradiation. It was theorized that this conflicting data was due to structural damage due to irradiation. This theory was supported by the fact that non-irradiated 50μm thick SiC is transparent for visible light and the higher the irradiation dose, the material of the same thickness became less transparent. However, changes in microscopy and polyforms observed by transmission electron microscopy in SiC due to irradiation were minor. Although existence of different polymorphs of SiC was documented, direct proof of the proposed theory has not yet been achieved.
| Original language | English |
|---|---|
| Title of host publication | Review of Progress in Quantitative Nondestructive Evaluation, Volume 32 |
| Editors | Dale E. Chimenti, Donald O. Thompson |
| Publisher | American Institute of Physics Inc. |
| Pages | 1188-1195 |
| Number of pages | 8 |
| ISBN (Electronic) | 9780735411296 |
| DOIs | |
| State | Published - 2013 |
| Externally published | Yes |
| Event | 39th Annual Review of Progress in Quantitative Nondestructive Evaluation, QNDE 2012 - Denver, United States Duration: 15 Jul 2012 → 20 Jul 2012 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Volume | 1511 |
| ISSN (Print) | 0094-243X |
| ISSN (Electronic) | 1551-7616 |
Conference
| Conference | 39th Annual Review of Progress in Quantitative Nondestructive Evaluation, QNDE 2012 |
|---|---|
| Country/Territory | United States |
| City | Denver |
| Period | 15/07/12 → 20/07/12 |
Bibliographical note
Publisher Copyright:© 2013 American Institute of Physics.
Keywords
- Nondestructive Evaluation
- Nuclear Transmutation
- Polyforms
- Silicon Carbide
- Transmission Electron Microscopy