Evaluation of beta-SiC for Sensors

J. Shor; D. Goldstein; A. D. Kurtz

Evaluation of beta-SiC for Sensors

J. Shor, D. Goldstein, A. D. Kurtz

Bar-Ilan University - The Alexander Kofkin Faculty of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The sensor properties of n-type beta -SiC, namely the gauge factor (GF) and temperature coefficient of resistivity (TCR), are reported over a wide range of temperatures. The maximum gauge factor observed was -31.8, which decreases to half its value over the temperature range 25-450 degrees C. Unintentionally doped SiC has a constant TCR of 0.72%/ degrees C over the range 25-800 degrees C and exhibits full impurity ionization at room temperature. Low-resistivity, nitrogen doped SiC is fully ionized at 250 degrees C, above which the resistance increases nonlinearly with temperature. It is shown that n-type beta -SiC has a large strain sensitivity, making it a potentially useful high-temperature sensing element. The piezoresistive properties of SiC can be explained simply by intervalley electron transfer.<>

Original language	American English
Title of host publication	Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Publisher	IEEE
State	Published - 1991

Bibliographical note

Place of conference:USA

Cite this

@inproceedings{9fb27507401c41ecba21ef54372fbdc8,

title = "Evaluation of beta-SiC for Sensors",

abstract = "The sensor properties of n-type beta -SiC, namely the gauge factor (GF) and temperature coefficient of resistivity (TCR), are reported over a wide range of temperatures. The maximum gauge factor observed was -31.8, which decreases to half its value over the temperature range 25-450 degrees C. Unintentionally doped SiC has a constant TCR of 0.72%/ degrees C over the range 25-800 degrees C and exhibits full impurity ionization at room temperature. Low-resistivity, nitrogen doped SiC is fully ionized at 250 degrees C, above which the resistance increases nonlinearly with temperature. It is shown that n-type beta -SiC has a large strain sensitivity, making it a potentially useful high-temperature sensing element. The piezoresistive properties of SiC can be explained simply by intervalley electron transfer.<>",

author = "J. Shor and D. Goldstein and Kurtz, {A. D.}",

note = "Place of conference:USA",

year = "1991",

language = "American English",

booktitle = "Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on",

publisher = "IEEE",

}

TY - GEN

T1 - Evaluation of beta-SiC for Sensors

AU - Shor, J.

AU - Goldstein, D.

AU - Kurtz, A. D.

N1 - Place of conference:USA

PY - 1991

Y1 - 1991

N2 - The sensor properties of n-type beta -SiC, namely the gauge factor (GF) and temperature coefficient of resistivity (TCR), are reported over a wide range of temperatures. The maximum gauge factor observed was -31.8, which decreases to half its value over the temperature range 25-450 degrees C. Unintentionally doped SiC has a constant TCR of 0.72%/ degrees C over the range 25-800 degrees C and exhibits full impurity ionization at room temperature. Low-resistivity, nitrogen doped SiC is fully ionized at 250 degrees C, above which the resistance increases nonlinearly with temperature. It is shown that n-type beta -SiC has a large strain sensitivity, making it a potentially useful high-temperature sensing element. The piezoresistive properties of SiC can be explained simply by intervalley electron transfer.<>

AB - The sensor properties of n-type beta -SiC, namely the gauge factor (GF) and temperature coefficient of resistivity (TCR), are reported over a wide range of temperatures. The maximum gauge factor observed was -31.8, which decreases to half its value over the temperature range 25-450 degrees C. Unintentionally doped SiC has a constant TCR of 0.72%/ degrees C over the range 25-800 degrees C and exhibits full impurity ionization at room temperature. Low-resistivity, nitrogen doped SiC is fully ionized at 250 degrees C, above which the resistance increases nonlinearly with temperature. It is shown that n-type beta -SiC has a large strain sensitivity, making it a potentially useful high-temperature sensing element. The piezoresistive properties of SiC can be explained simply by intervalley electron transfer.<>

UR - https://scholar.google.co.il/scholar?q=Evaluation+of+beta-SiC+for+Sensors&btnG=&hl=en&as_sdt=0%2C5

M3 - Conference contribution

BT - Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on

PB - IEEE

ER -

Evaluation of beta-SiC for Sensors

Abstract

Bibliographical note

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