@inproceedings{0c91a993d843482081e72a3c8ac8fd33,
title = "Evaluation of β--SiC for sensors",
abstract = "The sensor properties of n-type β-SiC, namely the gauge factor (GF) and temperature coefficient of resistivity (TCR), are reported over a wide range of temperatures. The maximum gauge factor observed was -31.8, which decreases to half its value over the temperature range 25-450°C. Unintentionally doped SiC has a constant TCR of 0.72%/°C over the range 25-800°C and exhibits full impurity ionization at room temperature. Low-resistivity, nitrogen doped SiC is fully ionized at 250°C, above which the resistance increases nonlinearly with temperature. It is shown that n-type β-SiC has a large strain sensitivity, making it a potentially useful high-temperature sensing element. The piezoresistive properties of SiC can be explained simply by intervalley electron transfer.",
author = "Shor, {J. S.} and D. Goldstein and Kurtz, {A. D.}",
year = "1991",
language = "אנגלית",
isbn = "0879425857",
series = "Transducers '91",
publisher = "Publ by IEEE",
pages = "912--915",
booktitle = "Transducers '91",
note = "1991 International Conference on Solid-State Sensors and Actuators ; Conference date: 24-06-1991 Through 28-06-1991",
}