Evaluation of β--SiC for sensors

J. S. Shor, D. Goldstein, A. D. Kurtz

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations


The sensor properties of n-type β-SiC, namely the gauge factor (GF) and temperature coefficient of resistivity (TCR), are reported over a wide range of temperatures. The maximum gauge factor observed was -31.8, which decreases to half its value over the temperature range 25-450°C. Unintentionally doped SiC has a constant TCR of 0.72%/°C over the range 25-800°C and exhibits full impurity ionization at room temperature. Low-resistivity, nitrogen doped SiC is fully ionized at 250°C, above which the resistance increases nonlinearly with temperature. It is shown that n-type β-SiC has a large strain sensitivity, making it a potentially useful high-temperature sensing element. The piezoresistive properties of SiC can be explained simply by intervalley electron transfer.

Original languageEnglish
Title of host publicationTransducers '91
PublisherPubl by IEEE
Number of pages4
ISBN (Print)0879425857
StatePublished - 1991
Externally publishedYes
Event1991 International Conference on Solid-State Sensors and Actuators - San Francisco, CA, USA
Duration: 24 Jun 199128 Jun 1991

Publication series

NameTransducers '91


Conference1991 International Conference on Solid-State Sensors and Actuators
CitySan Francisco, CA, USA


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