Epitaxial ZrC thin films grown by pulsed laser deposition

V. Craciun, J. Woo, D. Craciun, R. K. Singh

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

ZrC thin films were grown on (0 0 1)Si, (1 1 1)Si and (0 0 0 1)sapphire substrates by the pulsed laser deposition (PLD) technique. X-ray diffraction, X-ray reflectivity and Auger electron spectroscopy investigations were used to characterize the structure and composition of the deposited films. It has been found that films grown at temperatures higher than 700 °C under very low water vapor pressures were highly textured. Films deposited on (0 0 1)Si grew with the (0 0 1) axis perpendicular to the substrate, while those deposited on (1 1 1)Si and (0 0 0 1)sapphire grew with the (1 1 1) axis perpendicular to the substrate. Pole figures investigations showed that films were epitaxial, with in-plane axis aligned to those of the substrate.

Original languageEnglish
Pages (from-to)4615-4618
Number of pages4
JournalApplied Surface Science
Volume252
Issue number13 SPEC. ISS.
DOIs
StatePublished - 30 Apr 2006
Externally publishedYes

Funding

This work was partially funded by the Office of Naval Research under grant no. N00014-03-1-0605.

FundersFunder number
Office of Naval Research

    Keywords

    • Epitaxial films
    • Laser ablation
    • ZrC

    Fingerprint

    Dive into the research topics of 'Epitaxial ZrC thin films grown by pulsed laser deposition'. Together they form a unique fingerprint.

    Cite this