Abstract
ZrC thin films were grown on (0 0 1)Si, (1 1 1)Si and (0 0 0 1)sapphire substrates by the pulsed laser deposition (PLD) technique. X-ray diffraction, X-ray reflectivity and Auger electron spectroscopy investigations were used to characterize the structure and composition of the deposited films. It has been found that films grown at temperatures higher than 700 °C under very low water vapor pressures were highly textured. Films deposited on (0 0 1)Si grew with the (0 0 1) axis perpendicular to the substrate, while those deposited on (1 1 1)Si and (0 0 0 1)sapphire grew with the (1 1 1) axis perpendicular to the substrate. Pole figures investigations showed that films were epitaxial, with in-plane axis aligned to those of the substrate.
Original language | English |
---|---|
Pages (from-to) | 4615-4618 |
Number of pages | 4 |
Journal | Applied Surface Science |
Volume | 252 |
Issue number | 13 SPEC. ISS. |
DOIs | |
State | Published - 30 Apr 2006 |
Externally published | Yes |
Funding
This work was partially funded by the Office of Naval Research under grant no. N00014-03-1-0605.
Funders | Funder number |
---|---|
Office of Naval Research |
Keywords
- Epitaxial films
- Laser ablation
- ZrC