Epitaxial growth of Y2O3:Eu thin films on LaAlO3

H. J. Gao; D. Kumar; K. G. Cho; P. H. Holloway; R. K. Singh; X. D. Fan; Y. Yan; S. J. Pennycook

doi:10.1063/1.124971

Epitaxial growth of Y₂O₃:Eu thin films on LaAlO₃

H. J. Gao, D. Kumar, K. G. Cho, P. H. Holloway, R. K. Singh, X. D. Fan, Y. Yan, S. J. Pennycook

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Abstract

We report the epitaxial growth of europium-activated yttrium oxide (Y₂O₃:Eu) (001) thin films on LaAlO₃ (001) using laser ablation deposition at a substrate temperature of 775 °C and 10 Hz pulse repetition rate. The orientation relationship between the films and the substrates is [110]Y₂O₃∥[100]LaAlO₃ and [-110]Y₂O₃∥[010]LaAlO₃ which results in a lattice mismatch of only 0.8%. Transmission electron microscopy (TEM) of the films reveals the single crystalline Y₂O₃:Eu thin film to contain small pores. Scanning transmission electron microscopy (STEM) imaging of the films shows the substrate always terminates with the Al sublattice. Moreover, the STEM reveals that no precipitates of Eu had formed in the films.

Original language	English
Pages (from-to)	2223-2225
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	15
DOIs	https://doi.org/10.1063/1.124971
State	Published - 11 Oct 1999
Externally published	Yes

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title = "Epitaxial growth of Y2O3:Eu thin films on LaAlO3",

abstract = "We report the epitaxial growth of europium-activated yttrium oxide (Y2O3:Eu) (001) thin films on LaAlO3 (001) using laser ablation deposition at a substrate temperature of 775 °C and 10 Hz pulse repetition rate. The orientation relationship between the films and the substrates is [110]Y2O3∥[100]LaAlO3 and [-110]Y2O3∥[010]LaAlO3 which results in a lattice mismatch of only 0.8%. Transmission electron microscopy (TEM) of the films reveals the single crystalline Y2O3:Eu thin film to contain small pores. Scanning transmission electron microscopy (STEM) imaging of the films shows the substrate always terminates with the Al sublattice. Moreover, the STEM reveals that no precipitates of Eu had formed in the films.",

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AU - Gao, H. J.

AU - Kumar, D.

AU - Cho, K. G.

AU - Holloway, P. H.

AU - Singh, R. K.

AU - Fan, X. D.

AU - Yan, Y.

AU - Pennycook, S. J.

PY - 1999/10/11

Y1 - 1999/10/11

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AB - We report the epitaxial growth of europium-activated yttrium oxide (Y2O3:Eu) (001) thin films on LaAlO3 (001) using laser ablation deposition at a substrate temperature of 775 °C and 10 Hz pulse repetition rate. The orientation relationship between the films and the substrates is [110]Y2O3∥[100]LaAlO3 and [-110]Y2O3∥[010]LaAlO3 which results in a lattice mismatch of only 0.8%. Transmission electron microscopy (TEM) of the films reveals the single crystalline Y2O3:Eu thin film to contain small pores. Scanning transmission electron microscopy (STEM) imaging of the films shows the substrate always terminates with the Al sublattice. Moreover, the STEM reveals that no precipitates of Eu had formed in the films.

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Epitaxial growth of Y₂O₃:Eu thin films on LaAlO₃

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