Enhancement of Superconductivity upon reduction of carrier density in proximitized graphene

Gopi Nath Daptary; Udit Khanna; Eyal Walach; Arnab Roy; Efrat Shimshoni; Aviad Frydman

doi:10.48550/arXiv.2203.04669

Enhancement of Superconductivity upon reduction of carrier density in proximitized graphene

Gopi Nath Daptary, Udit Khanna, Eyal Walach, Arnab Roy, Efrat Shimshoni, Aviad Frydman

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Abstract

The superconducting transition temperature (Tc) of a single layer graphene coupled to an Indium oxide (InO) film, a low carrier-density superconductor, is found to increase with decreasing carrier density and is largest close to the average charge neutrality point in graphene. Such an effect is very surprising in conventional BCS superconductors. We study this phenomenon both experimentally and theoretically. Our analysis suggests that the InO film induces random electron and hole-doped puddles in the graphene. The Josephson effect across these regions of opposite polarity enhances the Josephson coupling between the superconducting clusters in InO, along with the overall Tc of the bilayer heterostructure. This enhancement is most effective when the chemical potential of the system is tuned between the charge neutrality points of the electron and hole-doped regions.

Original language	English
Number of pages	9
DOIs	https://doi.org/10.48550/arXiv.2203.04669
State	Published - 9 Mar 2022

Bibliographical note

Accepted in Phys. Rev. B (Letter)

Keywords

cond-mat.supr-con

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10.48550/arXiv.2203.04669License: CC BY

2203.04669v1

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@techreport{d7fa631ea4b740819022ec3236995159,

title = "Enhancement of Superconductivity upon reduction of carrier density in proximitized graphene",

abstract = " The superconducting transition temperature (Tc) of a single layer graphene coupled to an Indium oxide (InO) film, a low carrier-density superconductor, is found to increase with decreasing carrier density and is largest close to the average charge neutrality point in graphene. Such an effect is very surprising in conventional BCS superconductors. We study this phenomenon both experimentally and theoretically. Our analysis suggests that the InO film induces random electron and hole-doped puddles in the graphene. The Josephson effect across these regions of opposite polarity enhances the Josephson coupling between the superconducting clusters in InO, along with the overall Tc of the bilayer heterostructure. This enhancement is most effective when the chemical potential of the system is tuned between the charge neutrality points of the electron and hole-doped regions. ",

keywords = "cond-mat.supr-con",

author = "Daptary, {Gopi Nath} and Udit Khanna and Eyal Walach and Arnab Roy and Efrat Shimshoni and Aviad Frydman",

note = "Accepted in Phys. Rev. B (Letter)",

year = "2022",

month = mar,

day = "9",

doi = "10.48550/arXiv.2203.04669",

language = "אנגלית",

type = "WorkingPaper",

}

TY - UNPB

T1 - Enhancement of Superconductivity upon reduction of carrier density in proximitized graphene

AU - Daptary, Gopi Nath

AU - Khanna, Udit

AU - Walach, Eyal

AU - Roy, Arnab

AU - Shimshoni, Efrat

AU - Frydman, Aviad

N1 - Accepted in Phys. Rev. B (Letter)

PY - 2022/3/9

Y1 - 2022/3/9

N2 - The superconducting transition temperature (Tc) of a single layer graphene coupled to an Indium oxide (InO) film, a low carrier-density superconductor, is found to increase with decreasing carrier density and is largest close to the average charge neutrality point in graphene. Such an effect is very surprising in conventional BCS superconductors. We study this phenomenon both experimentally and theoretically. Our analysis suggests that the InO film induces random electron and hole-doped puddles in the graphene. The Josephson effect across these regions of opposite polarity enhances the Josephson coupling between the superconducting clusters in InO, along with the overall Tc of the bilayer heterostructure. This enhancement is most effective when the chemical potential of the system is tuned between the charge neutrality points of the electron and hole-doped regions.

AB - The superconducting transition temperature (Tc) of a single layer graphene coupled to an Indium oxide (InO) film, a low carrier-density superconductor, is found to increase with decreasing carrier density and is largest close to the average charge neutrality point in graphene. Such an effect is very surprising in conventional BCS superconductors. We study this phenomenon both experimentally and theoretically. Our analysis suggests that the InO film induces random electron and hole-doped puddles in the graphene. The Josephson effect across these regions of opposite polarity enhances the Josephson coupling between the superconducting clusters in InO, along with the overall Tc of the bilayer heterostructure. This enhancement is most effective when the chemical potential of the system is tuned between the charge neutrality points of the electron and hole-doped regions.

KW - cond-mat.supr-con

U2 - 10.48550/arXiv.2203.04669

DO - 10.48550/arXiv.2203.04669

M3 - פרסום מוקדם

BT - Enhancement of Superconductivity upon reduction of carrier density in proximitized graphene

ER -

Enhancement of Superconductivity upon reduction of carrier density in proximitized graphene

Abstract

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Keywords

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