Enhancement in optically induced ultrafast THz response of MoSe2MoS2 heterobilayer

SUNIL KUMAR, ARVIND SINGH, SANDEEP KUMAR, ANAND NIVEDAN, MARC TONDUSSON, JEROME DEGERT, JEAN OBERLE, SEOK JOON YUN, YOUNG HEE LEE, ERIC FREYSZ

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

THz conductivity of large area MoS2 and MoSe2 monolayers as well as their vertical heterostructure, MoSe2MoS2 is measured in the 0.3-5 THz frequency range. Compared to the monolayers, the ultrafast THz reflectivity of the MoSe2MoS2 heterobilayer is enhanced many folds when optically excited above the direct band gap energies of the constituting monolayers. The free carriers generated in the heterobilayer evolve with the characteristic times found in each of the two monolayers. Surprisingly, the same enhancement is recorded in the ultrafst THz reflectivity of the heterobilayer when excited below the MoS2 bandgap energy. A mechanism accounting for these observations is proposed.

Original languageEnglish
Pages (from-to)4181-4190
Number of pages10
JournalOptics Express
Volume29
Issue number3
DOIs
StatePublished - 1 Feb 2021
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2021 Optical Society of America.

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