Abstract
The expected performances of an Enhanced Optical Tunable Excited Capacitor (EOTEC) have been studied, as part of a large effort to develop optoelectronic high-speed devices for optical communication. The influence of nano/micro-crystal dots, embedded in a thick SiO2 film grown on a silicon substrate, has been studied as a function of several parameters such as the sweep rate, the penetration depth, the dots size and the various materials properties of several elements. We numerically demonstrate capabilities of future faster optoelectronic responsivity. The obtained series of C-V curves enable a good forecast of the possible usage and applications, such as MOSFET, tunable capacitor, memory unit, and Boolean logic element.
Original language | English |
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Title of host publication | 2018 IEEE International Conference on the Science of Electrical Engineering in Israel, ICSEE 2018 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781538663783 |
DOIs | |
State | Published - 2 Jul 2018 |
Externally published | Yes |
Event | 2018 IEEE International Conference on the Science of Electrical Engineering in Israel, ICSEE 2018 - Eilat, Israel Duration: 12 Dec 2018 → 14 Dec 2018 |
Publication series
Name | 2018 IEEE International Conference on the Science of Electrical Engineering in Israel, ICSEE 2018 |
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Conference
Conference | 2018 IEEE International Conference on the Science of Electrical Engineering in Israel, ICSEE 2018 |
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Country/Territory | Israel |
City | Eilat |
Period | 12/12/18 → 14/12/18 |
Bibliographical note
Publisher Copyright:© 2018 IEEE.
Keywords
- CMOS
- capacitor
- high-speed device
- semiconductor
- silicon
- tunable