Abstract
Low-temperature photoluminescence (PL) studies of InAs self-assembled quantum dots (SAQD’s) embedded in a GaAs matrix have been performed under hydrostatic pressure (Formula presented) up to 70 kbar. A strong blueshift of the PL line from the SAQD’s with (Formula presented) up to 53 kbar changes to a relatively small redshift at higher (Formula presented) This is the fingerprint of a (Formula presented) crossover. Above the crossover pressure, we find experimental evidence for type-II band alignment in the InAs SAQD/GaAs heterostructure system. This gives a reference point that allows us to determine independently the energies of the electron and hole levels in the QD.
| Original language | English |
|---|---|
| Pages (from-to) | R4250-R4253 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 58 |
| Issue number | 8 |
| DOIs | |
| State | Published - 1998 |
| Externally published | Yes |