Abstract
The energetics of molecular interfaces, used in determining the properties and performance of materials were described. A combination of ultraviolet photoemission spectroscopy measurement of highest occupied molecular orbital and inverse photoemission spectroscopy measurements of the lowest unoccupied molecular orbital of an organic monolayer was used to determine the single particle gap of the molecular materials. It was found that determining Fermi level position of the metal contact on the same energy scale, can derive energy barrier for electrons and hole injection across the interface. It was also found that structural defects, which give rise to new electronic states, can extend into the band gap of the pristine materials.
| Original language | English |
|---|---|
| Pages (from-to) | 32-41 |
| Number of pages | 10 |
| Journal | Materials Today |
| Volume | 8 |
| Issue number | 7 |
| DOIs | |
| State | Published - 2005 |
| Externally published | Yes |
Funding
This article is based to a large degree on what we learned from organizing, participating in, and summarizing the 306 th W. E. Heraeus Seminar on ‘Energetics of Interfaces between Organic Molecules and Conductors’, held in March 2003 in Bad Honnef, Germany. We thank the W. E. Heraeus Foundation for making that seminar possible and all the participants for their contributions. DC thanks the G. M. J. Schmidt Minerva Centre for Supramolecular Chemistry and the Philip M. Klutznick Research Fund at the Weizmann Institute, and the Israel Science Foundation (Jerusalem) for support. AK thanks the US National Science Foundation (NSF), grant DMR-0408589, the New Jersey Center for Organic Optoelectronics, and the Princeton MRSEC of the NSF.
| Funders | Funder number |
|---|---|
| New Jersey Center for Organic Optoelectronics | |
| Weizmann Institute | |
| National Science Foundation | DMR-0408589 |
| Materials Research Science and Engineering Center, Harvard University | |
| Israel Science Foundation |