Electroplated CuInS2 and CuInSe2 layers: Preparation and physical and photovoltaic characterization

Gary Hodes, Tina Engelhard, David Cahen, Lawrence L. Kazmerski, Charles R. Herrington

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CuInS2 films prepared by electrodeposition from an aqueous solution of Cu+ and In3+ ions and thiourea, with subsequent annealing in an H2S atmosphere, were characterized by photoelectrochemical measurements in a polysulfide electrolyte and by scanning electron microscopy and microprobe analyses. Laser scanning of the photocurrent together with microprobe analyses correlated n- and p-type behavior with indium-rich and copper-rich areas respectively. For n-type layers, performance appeared to be determined largely by the morphology of the layers. CuInS2 layers were also prepared by electrodeposition of a CuIn alloy and subsequent sulfurization in H2S. The above methods were extended to the preparation of CuIn5S8 (by adjustment of the copper-to-indium ratio in the bath) and CuInSe2 (by heating CuIn films in H2Se).

Original languageEnglish
Pages (from-to)93-106
Number of pages14
JournalThin Solid Films
Issue number1-2
StatePublished - 14 Jun 1985
Externally publishedYes


This work was supported by the Ministry of Research and Technology of the F.R.G. through the Kernforshungsanlage, Jiilich, and by the Solar Energy Research Institute (SERI), Golden, CO. We thank John Turner, Rick Matson and Bruce Parkinson, all from SERI, for their assistance and advice on some of the experiments, and Dr. Marvin S. Antelman for formulation of the bromide plating bath.

FundersFunder number
Ministry of Research and Technology
Arizona Research Institute for Solar Energy


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