TY - JOUR
T1 - Electronically active layers and interfaces in polycrystalline devices
T2 - Cross-section mapping of CdS/CdTe solar cells
AU - Visoly-Fisher, Iris
AU - Cohen, Sidney R.
AU - Cahen, David
AU - Ferekides, Christos S.
PY - 2003/12/15
Y1 - 2003/12/15
N2 - Type conversion in CdS in CdTe/CdS solar cells was disproved. CdS and high-resistance SnO2 layer in USF cells were found to be electronically similar, rationalizing the need for a HR layer in cells with very thin CdS for supporting the junction photovoltage, without reducing the cell's blue response. Most importantly, combined XS SCM and SKPM of CdTe/CdS cells show that the photovoltaic and metallurgical functions coincide.
AB - Type conversion in CdS in CdTe/CdS solar cells was disproved. CdS and high-resistance SnO2 layer in USF cells were found to be electronically similar, rationalizing the need for a HR layer in cells with very thin CdS for supporting the junction photovoltage, without reducing the cell's blue response. Most importantly, combined XS SCM and SKPM of CdTe/CdS cells show that the photovoltaic and metallurgical functions coincide.
UR - http://www.scopus.com/inward/record.url?scp=0347133647&partnerID=8YFLogxK
U2 - 10.1063/1.1632532
DO - 10.1063/1.1632532
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AN - SCOPUS:0347133647
SN - 0003-6951
VL - 83
SP - 4924
EP - 4926
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 24
ER -
