Abstract
Equations are derived for the transport properties of a system in which the localized electronic states in the band gap consist of a set of centers with negative effective correlation energy plus sets of electron and hole trap states, some of which have donor or acceptor character. Allowance is made for charge transport in the localized as well as in the extended states. These equations are applied to an analysis of the experimental results for amorphous As//2Te//3 and As//2Se//3, in order to test the validity of the model for these materials. The detailed properties of a material are found to be quite sensitive to the exact values of the trap densities in the specimen.
| Original language | English |
|---|---|
| Pages | 276-280 |
| Number of pages | 5 |
| State | Published - 1977 |
| Event | Amorphous and Liq Semicond, Proc of the Int Conf, 7th - Edinburgh, Engl Duration: 27 Jun 1977 → 1 Jul 1977 |
Conference
| Conference | Amorphous and Liq Semicond, Proc of the Int Conf, 7th |
|---|---|
| City | Edinburgh, Engl |
| Period | 27/06/77 → 1/07/77 |