Electronic properties of hfte2

P. C. Klipstein, D. R.P. Guy, E. A. Marseglia, J. I. Meakin, R. H. Friend, A. D. Yoffe

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

We report measurements of the transport properties of HfTe2and find these to be characteristic of a semimetal. We consider that this semimetallic behaviour arises from a small overlap of the tellurium p valence band and the hafnium d conduction band and estimate a band overlap of about 0.3 eV. Measurements of the conductivity and Hall coefficient show an increase in the band overlap and carrier concentration with pressure. Although there are some anomalies in the low-temperature transport properties at ambient pressure, we can find no evidence from either x-ray or electron diffraction for any associated structural phase transition such as that found in TiSe2. However, at pressures above 45 kbar there is a slow transition to a higher-resistivity phase.

Original languageEnglish
Pages (from-to)4953-4963
Number of pages11
JournalJournal of Physics C: Solid State Physics
Volume19
Issue number25
DOIs
StatePublished - 10 Sep 1986
Externally publishedYes

Fingerprint

Dive into the research topics of 'Electronic properties of hfte2'. Together they form a unique fingerprint.

Cite this