TY - JOUR
T1 - Electronic current transport through molecular monolayers
T2 - Comparison between Hg/alkoxy and alkyl monolayer/Si(100) junctions
AU - Thieblemont, Florent
AU - Seitz, Oliver
AU - Vilan, Ayelet
AU - Cohen, Hagai
AU - Salomon, Eric
AU - Kahn, Antoine
AU - Cahen, David
PY - 2008/10/17
Y1 - 2008/10/17
N2 - The preparation of alkoxy monolayers on oxide-free Si (100) and on electronic current transport measurements through junctions that are made up of these monolayers, sandwiched between Si as one electrode and a Hg drop as the other electrode, was reported. Based on the polarized IR spectra, the average tilt angles of the alkoxy and alkyl chains with respect to the surface normal are found to be very similar at 28° and 27° respectively. The monolayer thickness value for the OC12 layer, calculated using an inelastic mean free path of 3.3 nm, is 15∓2Å. The atomic force microscopy (AFM) and contact angle measurements indicate that neither binding chemistry nor molecular length alter the monlayer density. The X-ray photoelectron spectroscopy (XPS) binding energy of the C atom closets to the Si is lower than that of the C atom of the alkyl backbone.
AB - The preparation of alkoxy monolayers on oxide-free Si (100) and on electronic current transport measurements through junctions that are made up of these monolayers, sandwiched between Si as one electrode and a Hg drop as the other electrode, was reported. Based on the polarized IR spectra, the average tilt angles of the alkoxy and alkyl chains with respect to the surface normal are found to be very similar at 28° and 27° respectively. The monolayer thickness value for the OC12 layer, calculated using an inelastic mean free path of 3.3 nm, is 15∓2Å. The atomic force microscopy (AFM) and contact angle measurements indicate that neither binding chemistry nor molecular length alter the monlayer density. The X-ray photoelectron spectroscopy (XPS) binding energy of the C atom closets to the Si is lower than that of the C atom of the alkyl backbone.
UR - http://www.scopus.com/inward/record.url?scp=55749099488&partnerID=8YFLogxK
U2 - 10.1002/adma.200800659
DO - 10.1002/adma.200800659
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SN - 0935-9648
VL - 20
SP - 3931
EP - 3936
JO - Advanced Materials
JF - Advanced Materials
IS - 20
ER -