Electron transport in a slot-gate Si MOSFET

I. Shlimak, V. Ginodman, A. Butenko, K. J. Friedland, S. V. Kravchenko

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The transversal and longitudinal resistance in the quantum Hall effect regime was measured in a Si MOSFET sample in which a slot-gate allows one to vary the electron density and filling factor in different parts of the sample. In case of unequal gate voltages, the longitudinal resistances on the opposite sides of the sample differ from each other because the originated Hall voltage difference is added to the longitudinal voltage only on one side depending on the gradient of the gate voltages and the direction of the external magnetic field. After subtracting the Hall voltage difference, the increase in longitudinal resistance is observed when electrons on the opposite sides of the slot occupy Landau levels with different spin orientations.

Original languageEnglish
Article number47001
JournalEPL
Volume82
Issue number4
DOIs
StatePublished - 1 May 2008

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