Electron mean free path of tungsten and the electrical resistivity of epitaxial (110) tungsten films

Dooho Choi, Chang Soo Kim, Doron Naveh, Suk Chung, Andrew P. Warren, Noel T. Nuhfer, Michael F. Toney, Kevin R. Coffey, Katayun Barmak

Research output: Contribution to journalArticlepeer-review

68 Scopus citations


This work describes a study of the classical electrical resistivity size effect in tungsten. The important length scale for this size effect is the isotropic average electron mean free path (EMFP), which was determined to be 19.1 nm for W at 293 K by employing density functional theory. To explore the size effect experimentally, (110) oriented epitaxial W films with thicknesses ranging from 9.8 to 299.7 nm were prepared by sputter deposition onto (112̄0) Al 2O 3 substrates at 520 °C followed by postdeposition annealing in Ar-4%H 2 at 850 °C. Film resistivities were measured at room temperature and at liquid He temperature. The Fuchs-Sondheimer (FS) surface scattering model with a low specularity parameter (p = 0.11) was shown to provide a good description of the film resistivity as a function of film thickness. Further, it is shown that an upper bound to the EMFP cannot be established by fitting resistivity data to the FS model, whereas a lower bound can be assessed.

Original languageEnglish
Article number045432
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number4
StatePublished - 23 Jul 2012
Externally publishedYes


Dive into the research topics of 'Electron mean free path of tungsten and the electrical resistivity of epitaxial (110) tungsten films'. Together they form a unique fingerprint.

Cite this