Abstract
The impact of electron injection, using 10 keV beam of a Scanning Electron Microscope, on minority carrier transport in Si-doped β-Ga 2 O 3 was studied for temperatures ranging from room to 120°C. In-situ Electron Beam-Induced Current technique was employed to determine the diffusion length of minority holes as a function of temperature and duration of electron injection. The experiments revealed a pronounced elongation of hole diffusion length with increasing duration of injection. The activation energy, associated with the electron injection-induced elongation of the diffusion length, was determined at ∼ 74 meV and matches the previous independent studies. It was additionally discovered that an increase of the diffusion length in the regions affected by electron injection is accompanied by a simultaneous decrease of cathodoluminescence intensity. Both effects were attributed to increasing non-equilibrium hole lifetime in the valence band of β-Ga 2 O 3 semiconductor.
| Original language | English |
|---|---|
| Article number | 015127 |
| Journal | AIP Advances |
| Volume | 9 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1 Jan 2019 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2019 Author(s).
Funding
Research at UCF and the Weizmann institute was supported in part by NATO (award # G5453) and NSF (UCF award # ECCS1802208). The work at UF was sponsored by the Department of Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins.
| Funders | Funder number |
|---|---|
| National Science Foundation | ECCS1802208, 1802208 |
| U.S. Department of Defense | |
| Defense Threat Reduction Agency | HDTRA1-17-1-011 |
| North Atlantic Treaty Organization | G5453 |
| University of Central Florida |