Electron-dislocation scattering and negative deviations from matthiessen's rule

A. Bergmann, M. Kaveh, N. Wiser

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

It is shown that the negative deviations from Matthiessen's rule observed recently for the electrical resistivity of Al and of Ag can be explained quantitatively by including the effect of anisotropic electron-dislocation scattering.

Original languageEnglish
Pages (from-to)369-373
Number of pages5
JournalSolid State Communications
Volume34
Issue number5
DOIs
StatePublished - May 1980

Bibliographical note

Funding Information:
financial support provided by the Israel Commission for Basic Research.

Funding

financial support provided by the Israel Commission for Basic Research.

FundersFunder number
Israel Commission for Basic Research

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