Electron-dislocation scattering and negative deviations from matthiessen's rule

A. Bergmann, M. Kaveh, N. Wiser

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


It is shown that the negative deviations from Matthiessen's rule observed recently for the electrical resistivity of Al and of Ag can be explained quantitatively by including the effect of anisotropic electron-dislocation scattering.

Original languageEnglish
Pages (from-to)369-373
Number of pages5
JournalSolid State Communications
Issue number5
StatePublished - May 1980

Bibliographical note

Funding Information:
financial support provided by the Israel Commission for Basic Research.


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