Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- And 10 MeV proton-irradiated Si-doped β -Ga2O3Schottky rectifiers

Sushrut Modak; Leonid Chernyak; Alfons Schulte; Minghan Xian; Fan Ren; Stephen J. Pearton; Igor Lubomirsky; Arie Ruzin; Sergey S. Kosolobov; Vladimir P. Drachev

doi:10.1063/5.0052601

Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- And 10 MeV proton-irradiated Si-doped β -Ga₂O₃Schottky rectifiers

Sushrut Modak, Leonid Chernyak, Alfons Schulte, Minghan Xian, Fan Ren, Stephen J. Pearton, Igor Lubomirsky, Arie Ruzin, Sergey S. Kosolobov, Vladimir P. Drachev

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped β-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles and 10 MeV protons. Both diffusion length and lifetime exhibited a decrease with increasing temperature. The non-equilibrium minority hole mobility was calculated from the independently measured diffusion length and lifetime, indicating that the so-called hole self-trapping is most likely irrelevant in the 77-295 K temperature range.

Original language	English
Article number	202105
Journal	Applied Physics Letters
Volume	118
Issue number	20
DOIs	https://doi.org/10.1063/5.0052601
State	Published - 17 May 2021
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2021 Author(s).

Funding

The research at UCF and the Weizmann Institute was supported in part by NATO (Award No. G5453) and NSF (UCF Award No. ECCS1802208). Research at UCF and Tel Aviv University was supported in part by US-Israel BSF (No. 2018010) and NATO (Award No. G5748). The work at UF was performed as part of the Interaction of Ionizing Radiation with Matter University Research Alliance (IIRM-URA), sponsored by the Department of the Defense, Defense Threat Reduction Agency under Award No. HDTRA1-20-2-0002, monitored by Jacob Calkins and also by NSF DMR 1856662 (J. H. Edgar).

Funders	Funder number
US-Israel BSF	2018010, G5748
National Science Foundation	ECCS1802208
U.S. Department of Defense
Defense Threat Reduction Agency	HDTRA1-20-2-0002, DMR 1856662
North Atlantic Treaty Organization	G5453
University of Central Florida
Tel Aviv University

Access to Document

10.1063/5.0052601

Cite this

Modak, S., Chernyak, L., Schulte, A., Xian, M., Ren, F., Pearton, S. J., Lubomirsky, I., Ruzin, A., Kosolobov, S. S., & Drachev, V. P. (2021). Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- And 10 MeV proton-irradiated Si-doped β -Ga₂O₃Schottky rectifiers. Applied Physics Letters, 118(20), Article 202105. https://doi.org/10.1063/5.0052601

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abstract = "Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped β-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles and 10 MeV protons. Both diffusion length and lifetime exhibited a decrease with increasing temperature. The non-equilibrium minority hole mobility was calculated from the independently measured diffusion length and lifetime, indicating that the so-called hole self-trapping is most likely irrelevant in the 77-295 K temperature range.",

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AU - Schulte, Alfons

AU - Xian, Minghan

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Lubomirsky, Igor

AU - Ruzin, Arie

AU - Kosolobov, Sergey S.

AU - Drachev, Vladimir P.

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