Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped β-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles and 10 MeV protons. Both diffusion length and lifetime exhibited a decrease with increasing temperature. The non-equilibrium minority hole mobility was calculated from the independently measured diffusion length and lifetime, indicating that the so-called hole self-trapping is most likely irrelevant in the 77-295 K temperature range.
Bibliographical noteFunding Information:
The research at UCF and the Weizmann Institute was supported in part by NATO (Award No. G5453) and NSF (UCF Award No. ECCS1802208). Research at UCF and Tel Aviv University was supported in part by US-Israel BSF (No. 2018010) and NATO (Award No. G5748). The work at UF was performed as part of the Interaction of Ionizing Radiation with Matter University Research Alliance (IIRM-URA), sponsored by the Department of the Defense, Defense Threat Reduction Agency under Award No. HDTRA1-20-2-0002, monitored by Jacob Calkins and also by NSF DMR 1856662 (J. H. Edgar).
© 2021 Author(s).