TY - JOUR
T1 - Electron beam-induced mass transport in As-Se thin films
T2 - Compositional dependence and glass network topological effects
AU - Trunov, M. L.
AU - Cserháti, C.
AU - Lytvyn, P. M.
AU - Kaganovskii, Yu
AU - Kökényesi, S.
PY - 2013/6/19
Y1 - 2013/6/19
N2 - Electron beam (e-beam)-induced changes of surface profile morphology in AscSe1-c (0.2 < c < 0.5) thin films are investigated as a function of the film composition. It is shown that the extent and value of local surface alterations follow the composition-related changes of glass parameters such as softening temperature and glass network connectivity. The giant e-beam-induced surface relief changes detected in the films As0.2Se0.8 are connected with lateral mass transport, which increases drastically near rigidity transition, i.e. at a coordination number r ∼ 2.2 of the glass structures when the rigidity starts to percolate through the structure. The model of the process, which reflects the compositional dependence of the stimulated mass transport, is presented.
AB - Electron beam (e-beam)-induced changes of surface profile morphology in AscSe1-c (0.2 < c < 0.5) thin films are investigated as a function of the film composition. It is shown that the extent and value of local surface alterations follow the composition-related changes of glass parameters such as softening temperature and glass network connectivity. The giant e-beam-induced surface relief changes detected in the films As0.2Se0.8 are connected with lateral mass transport, which increases drastically near rigidity transition, i.e. at a coordination number r ∼ 2.2 of the glass structures when the rigidity starts to percolate through the structure. The model of the process, which reflects the compositional dependence of the stimulated mass transport, is presented.
UR - http://www.scopus.com/inward/record.url?scp=84878778032&partnerID=8YFLogxK
U2 - 10.1088/0022-3727/46/24/245303
DO - 10.1088/0022-3727/46/24/245303
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AN - SCOPUS:84878778032
SN - 0022-3727
VL - 46
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
IS - 24
M1 - 245303
ER -