Electrodeposition of CuInSe₂ and CuInS₂ films

Various methods to electrodeposit films of CuInSe(S)₂ are discussed. Two basically different methods are treated separately: electrodeposition of the ternary CuInSe(S) systems and deposition of a CuIn alloy followed by annealing in an Se(S)-containing atmosphere. Electrodeposition of the ternary CuInSe(S) systems includes CuInS₂ (and CuIn₅S₈) plated from a thiourea bath. Morphological, compositional and photoelectrochemical behaviour of these layers is discussed. Attempts to plate CuInSe₂ from an SeO₂-containing bath and CuInS₂ from a non-aqueous sulphur-containing bath are also treated. Discussion of the second method, deposition of a CuIn alloy, concentrates on the alloy deposition step. Both co-deposition of copper and indium and sequential deposition of indium on copper are treated, with emphasis on the morphology of the layers.