Electrodeposited layers of CuInS2, CuIn5S8 and CuInSe2

Gary Hodes; Tina Engelhard; Charles R. Herrington; Lawrence L. Kazmerski; David Cahen

doi:10.1016/0146-3535(84)90054-6

Electrodeposited layers of CuInS₂, CuIn₅S₈ and CuInSe₂

Gary Hodes
, Tina Engelhard
, Charles R. Herrington
, Lawrence L. Kazmerski
, David Cahen

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

CuInS₂ and CuIn₅S₈ films on Ti substrates, were prepared by electrocodeposition of Cu, In and S, from an aqueous bath, followed by annealing in H₂S. CuInS₂ and CuInSe₂ films could be prepared also be depositing a Cu-In alloy and converting it to the dichalcogenide by heating in H₂S or H₂Se. X-ray diffraction and microprobe analysis confirmed the structures and stoichiometries of the films. Their photovoltaic activity was tested using a polysulfide electrolyte/semiconductor junction. While only modest (up to 1.5%) white light conversion efficiencies were reached, something that is ascribed at least in part to the heterogeneity of the films, quantum efficiencies of up to 0.67 were measured at short-circuit.

Original language	English
Pages (from-to)	345-351
Number of pages	7
Journal	Progress in Crystal Growth and Characterization
Volume	10
Issue number	C
DOIs	https://doi.org/10.1016/0146-3535(84)90054-6
State	Published - 1984
Externally published	Yes

Funding

At the Weizmann Institute this work is supported by the Ministry for Research and Technology of the F.R. Germany, through the Israel National Council for Research and Development. The work at the Solar Energy Research Institute is supported by the U.S. Department of Energy under U.S. DOE contract DE-AC02-83CH10093. We thank J.A. Turner of SERI for the spectral response measurements and M.S. Antelman for formulation of the bromide bath.

Funders	Funder number
U.S. Department of Energy	DE-AC02-83CH10093
National Council for Forest Research and Development
Bundesministerium für Forschung und Technologie

Keywords

CuInS
CuInS
CuInSe
electrodeposition
photoelectrochemistry
polysulfide
thin film

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/0146-3535(84)90054-6

Cite this

@article{6e14dfedb7874a5bad01f393fd3ce7ab,

title = "Electrodeposited layers of CuInS2, CuIn5S8 and CuInSe2",

abstract = "CuInS2 and CuIn5S8 films on Ti substrates, were prepared by electrocodeposition of Cu, In and S, from an aqueous bath, followed by annealing in H2S. CuInS2 and CuInSe2 films could be prepared also be depositing a Cu-In alloy and converting it to the dichalcogenide by heating in H2S or H2Se. X-ray diffraction and microprobe analysis confirmed the structures and stoichiometries of the films. Their photovoltaic activity was tested using a polysulfide electrolyte/semiconductor junction. While only modest (up to 1.5\%) white light conversion efficiencies were reached, something that is ascribed at least in part to the heterogeneity of the films, quantum efficiencies of up to 0.67 were measured at short-circuit.",

keywords = "CuInS, CuInS, CuInSe, electrodeposition, photoelectrochemistry, polysulfide, thin film",

author = "Gary Hodes and Tina Engelhard and Herrington, \{Charles R.\} and Kazmerski, \{Lawrence L.\} and David Cahen",

year = "1984",

doi = "10.1016/0146-3535(84)90054-6",

language = "אנגלית",

volume = "10",

pages = "345--351",

journal = "Progress in Crystal Growth and Characterization",

issn = "0146-3535",

publisher = "Pergamon Press Ltd.",

number = "C",

}

TY - JOUR

T1 - Electrodeposited layers of CuInS2, CuIn5S8 and CuInSe2

AU - Hodes, Gary

AU - Engelhard, Tina

AU - Herrington, Charles R.

AU - Kazmerski, Lawrence L.

AU - Cahen, David

PY - 1984

Y1 - 1984

N2 - CuInS2 and CuIn5S8 films on Ti substrates, were prepared by electrocodeposition of Cu, In and S, from an aqueous bath, followed by annealing in H2S. CuInS2 and CuInSe2 films could be prepared also be depositing a Cu-In alloy and converting it to the dichalcogenide by heating in H2S or H2Se. X-ray diffraction and microprobe analysis confirmed the structures and stoichiometries of the films. Their photovoltaic activity was tested using a polysulfide electrolyte/semiconductor junction. While only modest (up to 1.5%) white light conversion efficiencies were reached, something that is ascribed at least in part to the heterogeneity of the films, quantum efficiencies of up to 0.67 were measured at short-circuit.

AB - CuInS2 and CuIn5S8 films on Ti substrates, were prepared by electrocodeposition of Cu, In and S, from an aqueous bath, followed by annealing in H2S. CuInS2 and CuInSe2 films could be prepared also be depositing a Cu-In alloy and converting it to the dichalcogenide by heating in H2S or H2Se. X-ray diffraction and microprobe analysis confirmed the structures and stoichiometries of the films. Their photovoltaic activity was tested using a polysulfide electrolyte/semiconductor junction. While only modest (up to 1.5%) white light conversion efficiencies were reached, something that is ascribed at least in part to the heterogeneity of the films, quantum efficiencies of up to 0.67 were measured at short-circuit.

KW - CuInS

KW - CuInSe

KW - electrodeposition

KW - photoelectrochemistry

KW - polysulfide

KW - thin film

UR - https://www.scopus.com/pages/publications/0021570398

U2 - 10.1016/0146-3535(84)90054-6

DO - 10.1016/0146-3535(84)90054-6

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0021570398

SN - 0146-3535

VL - 10

SP - 345

EP - 351

JO - Progress in Crystal Growth and Characterization

JF - Progress in Crystal Growth and Characterization

IS - C

ER -