Electrodeposited layers of CuInS₂, CuIn₅S₈ and CuInSe₂

CuInS₂ and CuIn₅S₈ films on Ti substrates, were prepared by electrocodeposition of Cu, In and S, from an aqueous bath, followed by annealing in H₂S. CuInS₂ and CuInSe₂ films could be prepared also be depositing a Cu-In alloy and converting it to the dichalcogenide by heating in H₂S or H₂Se. X-ray diffraction and microprobe analysis confirmed the structures and stoichiometries of the films. Their photovoltaic activity was tested using a polysulfide electrolyte/semiconductor junction. While only modest (up to 1.5%) white light conversion efficiencies were reached, something that is ascribed at least in part to the heterogeneity of the films, quantum efficiencies of up to 0.67 were measured at short-circuit.