Electrodeposited layers of CuInS2, CuIn5S8 and CuInSe2

Gary Hodes, Tina Engelhard, Charles R. Herrington, Lawrence L. Kazmerski, David Cahen

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


CuInS2 and CuIn5S8 films on Ti substrates, were prepared by electrocodeposition of Cu, In and S, from an aqueous bath, followed by annealing in H2S. CuInS2 and CuInSe2 films could be prepared also be depositing a Cu-In alloy and converting it to the dichalcogenide by heating in H2S or H2Se. X-ray diffraction and microprobe analysis confirmed the structures and stoichiometries of the films. Their photovoltaic activity was tested using a polysulfide electrolyte/semiconductor junction. While only modest (up to 1.5%) white light conversion efficiencies were reached, something that is ascribed at least in part to the heterogeneity of the films, quantum efficiencies of up to 0.67 were measured at short-circuit.

Original languageEnglish
Pages (from-to)345-351
Number of pages7
JournalProgress in Crystal Growth and Characterization
Issue numberC
StatePublished - 1984
Externally publishedYes


  • CuInS
  • CuInS
  • CuInSe
  • electrodeposition
  • photoelectrochemistry
  • polysulfide
  • thin film


Dive into the research topics of 'Electrodeposited layers of CuInS2, CuIn5S8 and CuInSe2'. Together they form a unique fingerprint.

Cite this