Electro-optical study of nanoscale Al-Si-truncated conical photodetector with subwavelength aperture

Matityahu Karelits; Yaakov Mandelbaum; Avraham Chelly; Avi Karsenty

doi:10.1117/1.JNP.11.046021

Electro-optical study of nanoscale Al-Si-truncated conical photodetector with subwavelength aperture

Matityahu Karelits, Yaakov Mandelbaum, Avraham Chelly, Avi Karsenty

Bar-Ilan University - The Alexander Kofkin Faculty of Engineering

Lev Academic Center

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

A type of silicon photodiode has been designed and simulated to probe the optical near field and detect evanescent waves. These waves convey subwavelength resolution. This photodiode consists of a truncated conical shaped, silicon Schottky diode having a subwavelength aperture of 150 nm. Electrical and electro-optical simulations have been conducted. These results are promising toward the fabrication of a new generation of photodetector devices.

Original language	English
Article number	046021
Journal	Journal of Nanophotonics
Volume	11
Issue number	4
DOIs	https://doi.org/10.1117/1.JNP.11.046021
State	Published - 1 Oct 2017

Bibliographical note

Publisher Copyright:
© The Authors.

Keywords

Evanescent waves
Near-field scanning optical microscopy
Photodetector
Silicon

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10.1117/1.JNP.11.046021

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abstract = "A type of silicon photodiode has been designed and simulated to probe the optical near field and detect evanescent waves. These waves convey subwavelength resolution. This photodiode consists of a truncated conical shaped, silicon Schottky diode having a subwavelength aperture of 150 nm. Electrical and electro-optical simulations have been conducted. These results are promising toward the fabrication of a new generation of photodetector devices.",

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AU - Karsenty, Avi

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N2 - A type of silicon photodiode has been designed and simulated to probe the optical near field and detect evanescent waves. These waves convey subwavelength resolution. This photodiode consists of a truncated conical shaped, silicon Schottky diode having a subwavelength aperture of 150 nm. Electrical and electro-optical simulations have been conducted. These results are promising toward the fabrication of a new generation of photodetector devices.

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KW - Near-field scanning optical microscopy

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Electro-optical study of nanoscale Al-Si-truncated conical photodetector with subwavelength aperture

Abstract

Bibliographical note

Keywords

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