Electric‐field‐induced room‐temperature doping in CuInSe2

Abram Jakubowicz; Geula Dagan; Claus Schmitz; David Cahen

doi:10.1002/adma.19920041107

Electric‐field‐induced room‐temperature doping in CuInSe₂

Abram Jakubowicz
, Geula Dagan
, Claus Schmitz
, David Cahen

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The electric‐field‐induced doping of semiconductors to form permanently‐doped, stable device structures using strong electric fields at room temperature is reported. The figure is a secondary electron image of two gold electrodes contacting the surface of the CuInSe₂ sample. Electric‐field application has resulted in the contact becoming ohmic (superimposed trace) indicating that an internal doping profile has been created. (Figure Presented.)

Original language	English
Pages (from-to)	741-745
Number of pages	5
Journal	Advanced Materials
Volume	4
Issue number	11
DOIs	https://doi.org/10.1002/adma.19920041107
State	Published - Nov 1992
Externally published	Yes

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10.1002/adma.19920041107

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title = "Electric‐field‐induced room‐temperature doping in CuInSe2",

abstract = "The electric‐field‐induced doping of semiconductors to form permanently‐doped, stable device structures using strong electric fields at room temperature is reported. The figure is a secondary electron image of two gold electrodes contacting the surface of the CuInSe2 sample. Electric‐field application has resulted in the contact becoming ohmic (superimposed trace) indicating that an internal doping profile has been created. (Figure Presented.)",

author = "Abram Jakubowicz and Geula Dagan and Claus Schmitz and David Cahen",

year = "1992",

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AU - Jakubowicz, Abram

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AU - Cahen, David

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N2 - The electric‐field‐induced doping of semiconductors to form permanently‐doped, stable device structures using strong electric fields at room temperature is reported. The figure is a secondary electron image of two gold electrodes contacting the surface of the CuInSe2 sample. Electric‐field application has resulted in the contact becoming ohmic (superimposed trace) indicating that an internal doping profile has been created. (Figure Presented.)

AB - The electric‐field‐induced doping of semiconductors to form permanently‐doped, stable device structures using strong electric fields at room temperature is reported. The figure is a secondary electron image of two gold electrodes contacting the surface of the CuInSe2 sample. Electric‐field application has resulted in the contact becoming ohmic (superimposed trace) indicating that an internal doping profile has been created. (Figure Presented.)

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Electric‐field‐induced room‐temperature doping in CuInSe₂

Abstract

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