Electric‐field‐induced room‐temperature doping in CuInSe2

Abram Jakubowicz, Geula Dagan, Claus Schmitz, David Cahen

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


The electric‐field‐induced doping of semiconductors to form permanently‐doped, stable device structures using strong electric fields at room temperature is reported. The figure is a secondary electron image of two gold electrodes contacting the surface of the CuInSe2 sample. Electric‐field application has resulted in the contact becoming ohmic (superimposed trace) indicating that an internal doping profile has been created. (Figure Presented.)

Original languageEnglish
Pages (from-to)741-745
Number of pages5
JournalAdvanced Materials
Issue number11
StatePublished - Nov 1992
Externally publishedYes


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