Electrical resistivity of a highly strained sample of potassium

Meir Danino; Moshe Kaveh; Nathan Wiser

doi:10.1016/0378-4363(81)90757-9

Electrical resistivity of a highly strained sample of potassium

Meir Danino
, Moshe Kaveh
, Nathan Wiser

Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The recent data for the electron-phonon scattering contribution to the electrical resistivity of a very strained sample of potassium are considerably higher than all previously reported values. It is shown that these higher values are due to the partial quenching of phonon drag by phonon-dislocation scattering. The calculation of the electron-phonon scattering term is carried out, taking explicit account of phonon-dislocation scattering. The resulting values are in excellent agreement with the measured data.

Original language	English
Pages (from-to)	907-908
Number of pages	2
Journal	Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics
Volume	108
Issue number	1-3
DOIs	https://doi.org/10.1016/0378-4363(81)90757-9
State	Published - 1981

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10.1016/0378-4363(81)90757-9

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title = "Electrical resistivity of a highly strained sample of potassium",

abstract = "The recent data for the electron-phonon scattering contribution to the electrical resistivity of a very strained sample of potassium are considerably higher than all previously reported values. It is shown that these higher values are due to the partial quenching of phonon drag by phonon-dislocation scattering. The calculation of the electron-phonon scattering term is carried out, taking explicit account of phonon-dislocation scattering. The resulting values are in excellent agreement with the measured data.",

author = "Meir Danino and Moshe Kaveh and Nathan Wiser",

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AU - Kaveh, Moshe

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AB - The recent data for the electron-phonon scattering contribution to the electrical resistivity of a very strained sample of potassium are considerably higher than all previously reported values. It is shown that these higher values are due to the partial quenching of phonon drag by phonon-dislocation scattering. The calculation of the electron-phonon scattering term is carried out, taking explicit account of phonon-dislocation scattering. The resulting values are in excellent agreement with the measured data.

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JF - Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics

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ER -

Electrical resistivity of a highly strained sample of potassium

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